Zobrazeno 1 - 10
of 213
pro vyhledávání: '"J B, Clegg"'
Autor:
A. V. S. Hill, D. J. Weatherall, J. S. Wainscoat, Helena Ayyub, Robert D. Nicholls, Douglas R. Higgs, J. B. Clegg, H. Teal
Although alpha thalassaemia is rare in north Europeans, it has been identified in British people with no known foreign ancestry. Twelve such patients were studied, of whom eight shared a distinctive molecular defect, which was clearly different from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31cb35e41391e30850de4e32ed72a8d1
https://doi.org/10.1136/bmj.290.6478.1303
https://doi.org/10.1136/bmj.290.6478.1303
Autor:
J. Flint, A. V. S. Hill, D. K. Bowden, S. J. Oppenheimer, P. R. Sill, S. W. Serjeantson, J. Bana-Koiri, K. Bhatia, M. P. Alpers, A. J. Boyce, D. J. Weatherall, J. B. Clegg
The frequency of alpha+-thalassaemia, but not other unlinked DNA polymorphisms, exhibits an altitude- and latitude-dependent correlation with malaria endemicity throughout Melanesia, supporting the hypothesis that protection against this parasitic di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd1e6d9bb527273780d7d287dfe11710
https://ora.ox.ac.uk/objects/uuid:7d7bd93c-1a27-4bb1-93fe-11126d174cca
https://ora.ox.ac.uk/objects/uuid:7d7bd93c-1a27-4bb1-93fe-11126d174cca
Autor:
David J. Weatherall, E. A. Letsky, J. B. Clegg, J. S. Wainscoat, Emmanuel Kanavakis, E. R. Huehns, Doug Higgs, G W Marsh, William G. Wood
Publikováno v:
British Journal of Haematology. 53:411-416
Restriction endonuclease analysis has been performed on the alpha and beta globin gene clusters of 57 Cypriots homozygous for beta thalassaemia, 30 with the transfusion dependent form of the condition (thalassaemia major) and 27 who are less severely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad6246267c8bcfb0973b367cb0eb5ec
https://doi.org/10.1111/j.1365-2141.1983.00353.x-i1
https://doi.org/10.1111/j.1365-2141.1983.00353.x-i1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2645-2650
The depth resolution attainable in secondary ion mass spectroscopy (SIMS) depth profiling is shown to be greatly enhanced by the use of a floating ion gun, which is capable of delivering high primary ion currents (ca. 100 nA) at impact energies down
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aeaf6b322e9fab0eb884240120b149f
https://doi.org/10.1116/1.579994
https://doi.org/10.1116/1.579994
Publikováno v:
Advanced Materials for Optics and Electronics. 5:79-86
The width of the band gap in the ternary system CdxHgI-xTe (CMT) is a function of the value of x and the assessment of device structures requires reliable techniques for the measurement of x both laterally and with depth. This work describes the deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c6c06bdf96189dc205d1774afc2e8e
https://doi.org/10.1002/amo.860050204
https://doi.org/10.1002/amo.860050204
Publikováno v:
Journal of The Electrochemical Society. 142:226-231
Amorphous Si 1-x C x layers were grown using low-pressure chemical vapor deposition with SiH 4 and C 2 H 4 at 780 o C and 6.65 kPa on Si substrates. These layers, which exhibit a high optical bandgap and atomically sharpinterface, were combined with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6119570612311b905c4f435c9537b35
https://doi.org/10.1149/1.2043872
https://doi.org/10.1149/1.2043872
Autor:
J. B. Clegg
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:143-146
Practical secondary ion mass spectrometry depth resolution data show that decreasing beam energies lead to an enhanced resolution down to the lowest practical energy of 1 keV O+2 at near normal incidence. For B and C in Si, the resolution full width
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262db4803fb0ddd473f32d4dad1c73cf
https://doi.org/10.1116/1.579429
https://doi.org/10.1116/1.579429
Autor:
J. J. Harris, M. R. Fahy, J. B. Clegg, S. S. Dosanjh, D. A. Sansom, Bruce A. Joyce, X. M. Zhang
Publikováno v:
Journal of Applied Physics. 74:2481-2485
Photoluminescence (PL), secondary‐ion mass spectroscopy (SIMS), and cross‐sectional transmission electron microscopy (TEM) measurements have been performed to assess surface segregation of In in GaAs during molecular‐beam epitaxial growth of In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38be086daf6af22349dbbe484db21da8
https://doi.org/10.1063/1.354686
https://doi.org/10.1063/1.354686
Publikováno v:
Semiconductor Science and Technology. 8:S281-S285
Doped homo- and heterostructures of CdxHg1-xTe (CMT) are required for some types of new-generation devices. These structures have been grown by metal organic vapour phase epitaxy (MOVPE) at approximately 360 degrees C onto both CdTe and GaAs (buffere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2901bf609fc5fe4d5d68479a740a9a34
https://doi.org/10.1088/0268-1242/8/1s/061
https://doi.org/10.1088/0268-1242/8/1s/061
Publikováno v:
IEEE Transactions on Electron Devices. 40:407-413
The crystallization of alpha -Si:H into poly-Si using an excimer laser has been examined. The resulting microstructure was found to be stratified into a large-grain surface region, formed from the liquid phase, and a fine-grain underlying layer, thou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74bba36b69ba58262114d7b997b63b6a
https://doi.org/10.1109/16.182521
https://doi.org/10.1109/16.182521