Zobrazeno 1 - 10
of 10
pro vyhledávání: '"J A, Maslar"'
Autor:
Ilesanmi Adesida, J. F. Dorsten, J. E. Maslar, C. Caneau, S. Agarwala, Rajaram Bhat, Paul W. Bohn
Publikováno v:
Physical Review B. 50:17143-17150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::880498a57379a722dd92405b02dd3b85
https://doi.org/10.1103/physrevb.50.17143
https://doi.org/10.1103/physrevb.50.17143
Publikováno v:
Journal of nanoscience and nanotechnology. 11(9)
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5091b3335199cdc0ca6b43bcb0c85058
https://pubmed.ncbi.nlm.nih.gov/22097559
https://pubmed.ncbi.nlm.nih.gov/22097559
Autor:
D. G. Ballegeer, C. Caneau, Paul W. Bohn, Ilesanmi Adesida, Rajaram Bhat, J. E. Maslar, E. Andideh
Publikováno v:
Journal of Applied Physics. 73:2983-2994
Structural and electrical property modifications in i‐InP and n+‐InP by reactive ion etching have been characterized by using Raman scattering to observe changes in the positions and intensities of intrinsic phonons and coupled phonon‐plasmon b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bff577d0c495cf3c970dd1d5d889f45
https://doi.org/10.1063/1.353031
https://doi.org/10.1063/1.353031
Autor:
J. E. Maslar, W. S. Hurst, D. R. Burgess, W. A. Kimes, N. V. Nguyen, E. F. Moore, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
Atomic layer deposition (ALD) is increasingly being utilized as a method of depositing the thin (nanometer‐scale), conformal layers required for microelectronics applications such as high κ gate dielectric layers and diffusion barriers. However, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0c368b0d78aaec70367928ea359040
https://doi.org/10.1063/1.2799355
https://doi.org/10.1063/1.2799355
Publikováno v:
Applied Physics Letters. 66:1755-1757
Passivation of the GaAs (100) surface by self‐assembled monolayers of octadecylthiol (ODT) has been studied using inelastic light scattering as a probe of the near‐surface electronic structure. Application of the ODT self‐assembled monolayers r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b713e6df0cc17fc759156836ef1de148
https://doi.org/10.1063/1.113357
https://doi.org/10.1063/1.113357
Publikováno v:
Applied Physics Letters. 64:3575-3577
Ar‐sputtering of In0.52Al0.48As was investigated with room‐temperature Raman and photoluminescence spectroscopy. A clear increase of carrier density in the near‐surface region was observed in the Raman spectra. The PL intensity was found to dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f74285397ee5001dc6af0336b9108f
https://doi.org/10.1063/1.111202
https://doi.org/10.1063/1.111202
Autor:
J. E. Maslar, Ilesanmi Adesida, S. Agarwala, C. Caneau, Rajaram Bhat, J. F. Dorsten, Paul W. Bohn
Publikováno v:
Applied Physics Letters. 63:1909-1911
Raman scattering by coupled longitudinal optic phonons and two‐dimensional electron gas electrons in In0.53Ga0.47As‐In0.52Al0.48As δ‐doped heterostructures provides a powerful probe of electronic properties in these In‐based structures. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::361c3fc07493124b23dd0c528bb232ce
https://doi.org/10.1063/1.110645
https://doi.org/10.1063/1.110645
Publikováno v:
Journal of Applied Physics. 104:103521
Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength perm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abefdf3d28220b89bccd9e362793a55d
https://doi.org/10.1063/1.3021159
https://doi.org/10.1063/1.3021159
Autor:
Ilesanmi Adesida, S. Agarwala, C. Caneau, J. E. Maslar, Rajaram Bhat, Paul W. Bohn, J. F. Dorsten
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:988
The effects of Ar sputtering and HBr reactive ion etching on In0.53Ga0.47As and In0.52Al0.48As epitaxial layers were investigated by Raman spectroscopy. First‐order phonon scattering was used as a probe of structural modification, while coupled pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d15e6bfaf4ddbf0f956e53b275e0a2
https://doi.org/10.1116/1.588217
https://doi.org/10.1116/1.588217
Autor:
E S, McCrea, J A, Maslar
Publikováno v:
Cancer. 50(8)
A 52-year-old woman with a history of myasthenia presented with an anterior mediastinal mass and three other apparent pleural-based lesions on the side of the mediastinal lesion. These masses were confirmed by computed tomography and believed to repr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::681d6926b271bcc2ddabb7ff40422b72
https://pubmed.ncbi.nlm.nih.gov/7116293
https://pubmed.ncbi.nlm.nih.gov/7116293