Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Jędrzej Stęszewski"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor
Externí odkaz:
https://doaj.org/article/beeac7050054438cb292d85243fdc0c7
