Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Jürgen Off"'
Autor:
Conny Becht, Michael Binder, Bastian Galler, Jürgen Off, Maximilian Tauer, Alvaro Gomez-Iglesias, Heng Wang, Martin Strassburg, Ulrich T. Schwarz
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
ResearcherID
Microscopy of Semiconducting Materials 2001
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26122d2bc5f860d0a6832bcc47107da7
https://doi.org/10.1201/9781351074629-5
https://doi.org/10.1201/9781351074629-5
Autor:
Anna Nirschl, Dominique Bougeard, Matthias Sabathil, Alvaro Gomez-Iglesias, Jürgen Off, Georg Hartung
Publikováno v:
physica status solidi (a). 211:2509-2513
The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN-based light emitting diodes is analyzed both experimentally and theoretically with a drift-diffusion transport model. A high-performance reference structure and two imp
Autor:
Shuji Nakamura, Mathias Schubert, Tanja Paskova, M. Heuken, Plamen Paskov, James S. Speck, Detlef Hommel, Jürgen Off, Hans Arwin, Bo Monemar, Vanya Darakchieva, Paul T. Fini, Benjamin A. Haskell
Publikováno v:
Journal of Crystal Growth. 300:233-238
We have studied phonons in two types of anisotropically strained GaN films: c-plane GaN films grown on α-plane sapphire and α-plane GaN films grown on r-plane sapphire. The anisotropic strain in the films is determined by high-resolution X-ray diff
Autor:
B. Birkmann, Georg Müller, Elke Meissner, Horst P. Strunk, S. Hussy, Jürgen Off, I. Brauer, F. Scholz
Publikováno v:
physica status solidi (a). 203:1676-1680
In this paper a-plane GaN-layers, grown by two different techniques are compared, mainly focusing on the surface morphology and microstructure of the samples: Layers grown by metal organic vapor phase epitaxy (MOVPE) exhibit a flat surface interrupte
Autor:
J. Gutowski, Andreas Rosenauer, Dagmar Gerthsen, E. Hahn, Martin Vehse, Jürgen Off, F. Scholz
Publikováno v:
physica status solidi (c). :2171-2176
The composition and thickness of GaInN quantum wells (QWs) determines the luminescence properties of GaInN/GaN-based optoelectronic devices. The In distribution is characterized by considerable inhomogeneities on two spatial scales. Variations of loc
Autor:
A. Kasic, Alois Krost, Isamu Akasaki, Jürgen Off, Donat Josef As, F. Scholz, Bo Monemar, Maria R. Correia, T. Böttcher, Yoshiki Saito, Armin Dadgar, Sérgio Pereira, Sven Einfeldt, Yasushi Nanishi, Detlef Hommel, Mathias Schubert, Vanya Darakchieva, B. Kuhn, U. Köhler, Hiroshi Amano, Gerald Wagner
Publikováno v:
physica status solidi (c). :1750-1769
This work reviews recent ellipsometric investigations of the infrared dielectric functions of binary, ternary, and quaternary group-III nitride films. Spectroscopic Ellipsometry in the mid-infrared range is employed for the first time to determine ph
Autor:
Michael Jetter, V. Perez-Solorzano, E. Hahn, Andreas Rosenauer, F. Scholz, Jürgen Off, Dagmar Gerthsen
Publikováno v:
physica status solidi (b). 234:738-741
A GaInN quantum-well structure with an average In-concentration of 16%, grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate, was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before
Autor:
B. Kuhn, Jürgen Off, Heinz Schweizer, H. Gräbeldinger, V. Perez-Solorzano, F. Scholz, Yasuyuki Kobayashi
Publikováno v:
Journal of Crystal Growth. 243:103-107
Processes involved in the formation of self-assembled GaInN/GaN islands without a surfactant on (0 0 0 1) 6H–SiC substrates have been investigated by atomic force microscopy (AFM). The GaInN islands were grown by metalorganic vapor phase epitaxy us
Autor:
S. Heppel, B. Kuhn, Georg Brüderl, Andreas Weimar, Alfred Lell, Volker Härle, F. Scholz, Andreas Hangleiter, Jürgen Off, V. Kümmler, Stefan Bader
Publikováno v:
physica status solidi (a). 188:59-63
Optical gain and absorption of different laser-structures were measured and calculated in order to clarify the influence of internal fields on these properties. For the calculations a model is used that is based on the assumption of band-to-band tran