Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jürgen Niess"'
Publikováno v:
Solar Energy Materials and Solar Cells. 200:109978
The diffusion of dopants from the poly-Si layer through the interfacial oxide into the crystalline silicon wafer is studied experimentally and via numerical simulation. It is found that phosphorus piles up at the poly-Si/SiOx interface but boron read
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c8af85d4e0662d570ec71f2eb81982
https://doi.org/10.1016/j.solmat.2019.109978
https://doi.org/10.1016/j.solmat.2019.109978
Autor:
Jürgen Niess, Boris Bayha, Georg Roters, Michael Raab, Christoph Kirchner, Rolf Stephan, Susanne Ohsiek, Tilo Mantei, Karsten Wieczorek, Martin Trentzsch, Waltraud Dietl, Zsolt Nenyei, Christian Golz, Wilfried Lerch
Publikováno v:
Materials Science Forum. :153-163
In this work we present a comprehensive comparison of ultra thin thermally nitrided (TN) to plasma nitrided (PN) gate dielectrics (GD). We will show that thermal nitridation is a promising technique to increase the nitrogen concentration up to 25%. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e72e09f36cc4629a5f8e38e665aadfc
https://doi.org/10.4028/www.scientific.net/msf.573-574.153
https://doi.org/10.4028/www.scientific.net/msf.573-574.153
Autor:
Silke Paul, Wolfgang Windl, L.F. Giles, S. McCoy, Wilfried Lerch, Zsolt Nenyei, Jürgen Niess, J. Gelpey, Alexander Burenkov, Peter Pichler, Jurgen Lorenz
Publikováno v:
Scopus-Elsevier
The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::befd071310ada720e29b98e8a1f7dd4e
https://doi.org/10.4028/www.scientific.net/ddf.258-260.510
https://doi.org/10.4028/www.scientific.net/ddf.258-260.510
Publikováno v:
Chemical Physics Letters. 190:503-506
Experiments verifying quadrupolar magic echoes are reported. Magic echoes are known for dipolar coupled solids. Using so-called “time-reversal” pulse sequences, they can be produced after evolution intervals even much longer than the transverse r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619001333c5f0ca49e8e123c45586e69
https://doi.org/10.1016/0009-2614(92)85181-9
https://doi.org/10.1016/0009-2614(92)85181-9
Autor:
Peter Pichler, Alexander Burenkov, Wilfried Lerch, Jürgen Lorenz, Silke Paul, Jürgen Niess, Zsolt Nényei, Jeffrey C. Gelpey, Steve McCoy, Wolfgang Windl, Luis Felipe Giles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e7f3944aa4f737b72778b7d7666ee0
https://doi.org/10.4028/3-908451-36-1.510
https://doi.org/10.4028/3-908451-36-1.510
Autor:
Wilhelm Kegel, Malte Czernohorsky, Stefan Riedel, Wilfried Lerch, T. Schick, Jürgen Niess, Nicole Sacher
Publikováno v:
ECS Transactions
Oxidation is a key process step in semiconductor device fabrication. Oxides are widely used in the production process as gate dielectrics, interfacial layers for high-k deposition, pad oxides, sacrificial oxides, screen oxides, protection oxides etc.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6f2432051736574ee049748ba4c4fd7
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