Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jürgen Berntgen"'
Autor:
Franz-Josef Tegude, K. Heime, U. Auer, Jürgen Kluth, Jürgen Berntgen, W. Daumann, Alexander Behres
The 1/ f noise of various InGaAs layers lattice matched to InP is investigated systematically at room temperature. To elucidate the origin of the 1/ f noise in this type of III–V compound semiconductor, thick n-type doped InGaAs layers, typical InP
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::277a047e7349d6b17d2c102323a5f5b3
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0034325621
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0034325621
Autor:
U. Auer, Teck Leong Lim, K. Heime, Arvydas Matulionis, Franz-Josef Tegude, W. Daumann, Jürgen Berntgen
The 1/f noise of 10 different ungated 2DEG structures based on InP substrates with InGaAs channels was investigated in the frequency range from 0.4 Hz to 100 kHz at temperatures between 80 K and 320 K. In spite of various channel designs (with mobili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e1e1a70bcd3941b7bcccb36a1433ae7
The 1/f noise of various InP-based two-dimensional electron gas (2DEG) structures with InGaAs channels was investigated at room temperature in the frequency range from 0.4 Hz to 100 kHz. The experimental results on the gate-bias dependent 1/f noise i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8954fa96593f43fef42a5c0ee088010a
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0032741333
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0032741333