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Autor:
Jörg-Th. Zettler, T. Wehnert, Markus Pristovsek, Jutta Platen, Housni Menhal, Carsten Setzer, Karl Jacobi, T. Schmidtling, Wolfgang Richter, Norbert Esser
Publikováno v:
Journal of Crystal Growth. 195:1-5
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) with reflectance anisotropy spectroscopy (RAS) and low energy electron diffraction (LEED) and found two different static (no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11c6b2da3a553346ee3c05dee9ff4ef
https://doi.org/10.1016/s0022-0248(98)00695-2
https://doi.org/10.1016/s0022-0248(98)00695-2
