Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jörg Kludt"'
Publikováno v:
Microelectronics Reliability. 54:1724-1728
The miniaturization process of CMOS components creates new challenges for the development of integrated circuits. Especially the connections with a tungsten via between two metal layers can be a problem. Changes in geometry can bear on reliability pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd3011ed7469bd4d9540ad8489babdc4
https://doi.org/10.1016/j.microrel.2014.07.042
https://doi.org/10.1016/j.microrel.2014.07.042
Publikováno v:
Microelectronics Reliability. 54:1977-1981
For a high robust metallization it is necessary to solve different problems related to migration mechanisms and thermo-mechanical stress in the material. Extended operating conditions and challenging assembling processes influence stress behaviour in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e737d8c33665b438996fc5e633f9ea
https://doi.org/10.1016/j.microrel.2014.07.039
https://doi.org/10.1016/j.microrel.2014.07.039
Publikováno v:
Microelectronics Reliability. 53:1606-1610
Robust metallizations for harsh environment and high current applications in integrated circuits are required for automotive or industrial applications. To achieve a higher current capability so called “power metals” are used. The new concept of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::536af70d7a836b5aa50b6c26c356a8b8
https://doi.org/10.1016/j.microrel.2013.07.059
https://doi.org/10.1016/j.microrel.2013.07.059
Autor:
Verena Hein, Aymen Moujbani, Markus Ackermann, Kirsten Weide-Zaage, Jörg Kludt, Lutz Meinshausen
Publikováno v:
Microelectronics Reliability. 53:1365-1369
At the moment the miniaturisation of integrated circuits for consumer electronics means to decrease the size of Cu interconnects below 100 nm, while a lifetime of 3–5 years has to be guaranteed. For industrial and automotive applications wider Al i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04b9ddf7e63397b48a331d7d31a7bbf3
https://doi.org/10.1016/j.microrel.2013.07.097
https://doi.org/10.1016/j.microrel.2013.07.097
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
For industrial and automotive applications a 0.35μm aluminium CMOS process is one of the common used technologies. An increasing demand on extended operating conditions must be fulfilled especially for high current carrying metal lines. A new design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0649eefecbf3b87f9c4760c3a5b6d480
https://doi.org/10.1109/irps.2014.6861153
https://doi.org/10.1109/irps.2014.6861153
Autor:
Aymen Moujbani, Hélène Fremont, Lutz Meinshausen, B. Goldbeck, Kirsten Weide-Zaage, Jörg Kludt
Publikováno v:
2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
The main trends in consumer electronics are increasing performances of their products and a reduction of the costs. These trends lead to an ongoing integration on package level which leads to a decreasing size of the solder contacts. This goes along
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f44b83b83eb5a207e6a15118208891f3
https://doi.org/10.1109/eurosime.2014.6813775
https://doi.org/10.1109/eurosime.2014.6813775
Publikováno v:
LASCAS
The development of 3D-silicon integrated circuits is an increasing demand especially regarding to advanced 3D-packages and high performance applications, with the intend to miniaturize and to reduce costs. Through-silicon-vias (TSV), interconnects an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc2433bec26e601368086fd1d87bfb36
https://doi.org/10.1109/lascas.2014.6820324
https://doi.org/10.1109/lascas.2014.6820324
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
Due to the miniaturization process of the CMOS components metallization structures are becoming more and more complex. Better knowledge to improve via robustness for high current applications is needed. Geometry changes can have a big effect on the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc2f3fc5d17a178f5ac33050ed2d9ea
https://doi.org/10.1109/iirw.2013.6804178
https://doi.org/10.1109/iirw.2013.6804178
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
The advantage of an increased lifetime of slotted metal tracks for the use in integrated circuits has already been shown. A benefit for slotted metal track geometries especially for thick metal tracks under DC and DC pulsed stress test conditions cou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b9309e5ab8a93f2b390658024bf1a0f
https://doi.org/10.1109/iirw.2013.6804184
https://doi.org/10.1109/iirw.2013.6804184
Publikováno v:
2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
For high temperature automotive applications a 0.35 μm aluminium CMOS is one of the common technology processes. In this process Ti/Al/Ti/TiN stacks are used as metallization. These aluminium stacks form TiAl3 layers during the following annealing s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5809781577b4aa2ad5129c4276d2ad36
https://doi.org/10.1109/eurosime.2013.6529896
https://doi.org/10.1109/eurosime.2013.6529896