Výsledky vyhledávání - "Jörg Jatzkowski"

Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same Tilt Angle using Multiple Techniques

Autor: William Courbat, Jörg Jatzkowski

Publikováno v: EDFA Technical Articles. 21:22-28

A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d7edd0e05726b6670c713d39943352b
https://doi.org/10.31399/asm.edfa.2019-4.p022

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High-Resolution Resistance Mapping in SEM

Autor: Frank Altman, Guillaume Boetsch, Grigore Moldovan, Wolfgang Joachimi, Jörg Jatzkowski

Publikováno v: International Symposium for Testing and Failure Analysis.

This work presents advanced resistance mapping techniques based on Scanning Electron Microscopy (SEM) with nanoprobing systems and the related embedded electronics. Focus is placed on recent advances to reduce noise and increase speed, such as integr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::504549fd1abbd3d00d4498c24c4eb4a8
https://doi.org/10.31399/asm.cp.istfa2018p0353

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Localization of Weak Points in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging

Autor: Michél Simon-Najasek, Jörg Jatzkowski, Frank Altmann

Publikováno v: International Symposium for Testing and Failure Analysis.

A novel approach for the localization of weak points in thin transistor and capacitor oxides before electrical breakdown will be presented in this paper. The proposed approach utilizes Electron Beam Absorbed Current (EBAC) imaging based on Scanning E

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::290b8b02d53aa693ee8499723475c146
https://doi.org/10.31399/asm.cp.istfa2014p0491

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A New Technique for Non-Invasive Short-Localisation in Thin Dielectric Layers by Electron Beam Absorbed Current (EBAC) Imaging

Autor: Jörg Jatzkowski, Frank Altmann, Michél Simon-Najasek, Christian Große

Publikováno v: International Symposium for Testing and Failure Analysis.

In this paper a novel approach for precise localisation of thin oxide breakdowns in transistor or capacitor structures by electron beam absorbed current (EBAC) imaging based on Scanning Electron Microscopy will be presented. The technique significant

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9b529cd73d565f23991332061e143449
https://doi.org/10.31399/asm.cp.istfa2012p0061

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