Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Jögen Olsson"'
Publikováno v:
Microelectronic Engineering. 65:428-438
In this study a possible approach for improving breakdown voltage while maintaining fT for a MOSFET, is presented. In a conventional MOSFET process with LDD the S/D is implanted with a large tilt angle, which gives an asymmetry due to the shadowing e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4832d57db8c47428d0b7198e86308ffe
https://doi.org/10.1016/s0167-9317(03)00054-6
https://doi.org/10.1016/s0167-9317(03)00054-6
