Direct Wafer Bonding for Nanostructure Preparations

Autor: Jérôme Meziere, François Rieutord, F. Fournel, Hubert Moriceau, Pascal Gentile, B. Aspar, C. Morales, Alexis Bavard, Joël Eymery, A. Pascale, O. Rayssac, Benoit Bataillou, Christophe Maleville, Anne-Marie Charvet

Publikováno v: Solid State Phenomena. :29-32

Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a6e15f880bff47d45319d0145efb0fa
https://doi.org/10.4028/www.scientific.net/ssp.121-123.29

Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

Autor: Jérôme Meziere, Michel Pons, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon

Publikováno v: Materials Science Forum. :731-734

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9140412647eeecf16e4e1a229e6e41d
https://doi.org/10.4028/www.scientific.net/msf.457-460.731

Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC

Autor: Lea Di Cioccio, Pierre Ferret, Elisabeth Blanquet, Jérôme Meziere, Jean Marc Dedulle, Thierry Billon, Michel Pons

Publikováno v: Materials Science Forum. :141-144

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5668a88527a83acfa2e216bffb3c8f84
https://doi.org/10.4028/www.scientific.net/msf.433-436.141

Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study

Autor: Jérôme Meziere, Tobias U. Schülli, Pascal Gentile, Alexis Bavard, A. Pascale, Joël Eymery, F. Fournel

Publikováno v: Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2006, 600 (16), pp.3187-3193. ⟨10.1016/j.susc.2006.06.004⟩
Surface Science
Surface Science, Elsevier, 2006, 600 (16), pp.3187-3193. ⟨10.1016/j.susc.2006.06.004⟩

International audience; The self-organized growth of germanium quantum dots on square nanopatterned Si(0 0 1) substrates is investigated by scanning tunnelling microscopy (STM) and grazing incidence X-ray diffraction (GIXRD) techniques. A regular sur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58c74d702feaf1f45ef4cf05aaaaac47
https://hal.science/hal-01876867

Heat and mass transfer modeling for a better knowledge of the large-area growth of homoepitaxial SiC by CVD

Autor: Roland Madar, Jean Marc Dedulle, Michel Pons, Thierry Billon, Pierre Ferret, Elisabeth Blanquet, Stephane Wan Tang Kuan, Claude Bernard, Lea Di Cioccio, Jérôme Meziere

Publikováno v: Scopus-Elsevier

The growth of thick epitaxial 4H-SiC layers with low defect density is an essential step for the fabrication of SiC based devices. Cold- and hot wall reactors using silane and propane diluted in hydrogen were used in this study. The typical growth te

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e68654fd2901a91c5a5ddf7303cd0917
https://doi.org/10.1557/proc-640-h5.6