Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jérôme Le Perchec"'
Autor:
Jean-Alain Nicolas, Salvatore Pes, Pierre Bleuet, L. Mathieu, Johan Rothman, Jean-Pierre Rostaing, Sylvain Gout, Jérôme Le Perchec, Sébastien Renet, Julie Abergel
Publikováno v:
Journal of Electronic Materials. 49:6881-6892
The characterization results and analysis from the detection of meso-photonic laser pulses, characterized by zero to tens of photons per pulse, using an in-house developed detector module based on HgCdTe avalanche photodiodes (APDs) are reported. In
Autor:
Jérôme Le Perchec, Giacomo Badano
Publikováno v:
Applied optics. 61(2)
We present an imager architecture comprising dark and active pixels allowing the simultaneous measurement of photonic and dark current, which is of particular interest for low-photon-flux astronomical applications. The principle of operation relies o
Autor:
J.F. Lerat, Marianne Coig, Frederic Milesi, Frédéric Mazen, Thomas Michel, Yannick Veschetti, Sébastien Dubois, Jérôme Le Perchec, Thibaut Desrues, Laurent Roux
Publikováno v:
Energy Procedia. 92:697-701
The use of plasma immersion ion implantation (PIII) is a relevant approach for the development of advanced solar cells technologies at lower cost (€/W p ). In this paper, we report on the development of homogeneous boron (B) doping of n-type crysta
Autor:
Sébastien Duguay, Adeline Lanterne, Mohit Raghuwanshi, Jérôme Le Perchec, Emmanuel Cadel, Philippe Pareige, S. Gall
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:1724-1733
The use of ion implantation doping instead of the standard gaseous diffusion is a promising way to simplify the fabrication process of silicon solar cells. However, difficulties to form high-quality boron (B) implanted emitters are encountered when i
Autor:
Marianne Coig, S. Manuel, Aurélie Tauzin, S. Gall, Jérôme Le Perchec, Adeline Lanterne, Yannick Veschetti
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:1458-1465
Ion implantation has the advantage of being a unidirectional doping technique. Unlike gaseous diffusion, this characteristic highlights strong possibilities to simplify solar cell process flows. The use of ion implantation doping for n-type PERT bifa
Autor:
Marianne Coig, Adeline Lanterne, Laurent Lachal, Jérôme Le Perchec, Frederic Milesi, Frédéric Mazen, J.F. Lerat, Thibaut Desrues
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩
International audience; Production costs and energy efficiency are the main priorities for the photovoltaic (PV) industry (COP21 conclusions). To lower costs and increase efficiency, we are proposing to reduce the number of processing steps involved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d29d0b103ed7c957abf1c36bfa450129
https://cea.hal.science/cea-02202421
https://cea.hal.science/cea-02202421
Autor:
Jérôme Le Perchec
Publikováno v:
Optics Letters. 44:5302
We study a frequency-selective photon absorber able to efficiently confine light within very thin semiconducting layers. The active material is appropriately embedded in a cavity resonator where lateral resonances occur, based on nonplasmonic modes,
Autor:
Jérôme Le Perchec
Publikováno v:
Journal of the Optical Society of America B. 36:2266
We closely study the local amplifications of visible light on a thin gallium-phosphide slab presenting a sub-wavelength array of small, rectangular, bottom-closed holes. The high-quality Fabry–Perot resonances of eigenmodes which vertically oscilla
Autor:
Marianne Coig, Jérôme Le Perchec, Laurent Lachal, Adeline Lanterne, Frederic Milesi, J.F. Lerat, Thibaut Desrues, Frédéric Mazen
Publikováno v:
2016 16th International Workshop on Junction Technology (IWJT).
The doping of n-type silicon solar cells was investigated using two ion implantation techniques: beam line and plasma immersion. Initially, we evaluated the benefits of beamline ion implantation in replacement of diffusion anneal doping process. Two
Autor:
Jean-Paul Kleider, Jérôme Le Perchec, Renaud Varache, Christine Denis, Delfina Muñoz, Tristan Carrere
Publikováno v:
5th International Conference on Silicon Photovoltaics, SiliconPV 2015
5th International Conference on Silicon Photovoltaics, SiliconPV 2015, Mar 2015, Konstanz, Germany
Energy Procedia
Energy Procedia, 2015, 77, pp.451-457. ⟨10.1016/j.egypro.2015.07.064⟩
Energy Procedia, Elsevier, 2015, 77, pp.451-457. ⟨10.1016/j.egypro.2015.07.064⟩
5th International Conference on Silicon Photovoltaics, SiliconPV 2015, Mar 2015, Konstanz, Germany
Energy Procedia
Energy Procedia, 2015, 77, pp.451-457. ⟨10.1016/j.egypro.2015.07.064⟩
Energy Procedia, Elsevier, 2015, 77, pp.451-457. ⟨10.1016/j.egypro.2015.07.064⟩
International audience; In this work, an emerging cell concept based on silicon homo-heterojunction (HHJ) is investigated. Compared to the n-type silicon heterojunction cell (HET), the HHJ architecture contains an additional thin and highly doped (p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::473ffdf9f267ba058075bd26a2159f46
https://hal.science/hal-01232104
https://hal.science/hal-01232104