Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Jérémie Chrétien"'
Autor:
Binbin Wang, Emilie Sakat, Etienne Herth, Maksym Gromovyi, Andjelika Bjelajac, Julien Chaste, Gilles Patriarche, Philippe Boucaud, Frédéric Boeuf, Nicolas Pauc, Vincent Calvo, Jérémie Chrétien, Marvin Frauenrath, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a num
Externí odkaz:
https://doaj.org/article/37bfa51b9002480b9af4751b7b33e82a
Autor:
Jean-Michel Hartmann, Nicolas Pauc, Emilie Sakat, Frederic Boeuf, Jérémie Chrétien, Julien Chaste, Vincent Calvo, Alexei Chelnokov, Moustafa El Kurdi, Marvin Frauenrath, Vincent Reboud, Maksym Gromovyi, Andjelika Bjelajac, Binbin Wang, Gilles Patriarche, Etienne Herth, Philippe Boucaud
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-13 (2021)
Light: Science and Applications
Light: Science and Applications, Nature Publishing Group, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light, Science & Applications
Light: Science and Applications, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light: Science and Applications
Light: Science and Applications, Nature Publishing Group, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
Light, Science & Applications
Light: Science and Applications, 2021, 10, ⟨10.1038/s41377-021-00675-7⟩
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of li
Autor:
Valentin Daniel, Jérémie Chretien, Sonia Blais, Jinyoun Cho, Kristof Dessein, Gwenaelle Hamon, Abderraouf Boucherif, Maxime Darnon
Publikováno v:
Micro and Nano Engineering, Vol 24, Iss , Pp 100274- (2024)
Mesoporous germanium (MP-Ge) emerges as a very appealing material for many applications such as anode material for Lithium-Ion batteries due to it high specific area and large void spaces or, in optoelectronics as sacrificial layer for III-V material
Externí odkaz:
https://doaj.org/article/da9bb2f2062d420cafe80748ef724b1d
Autor:
Binbin Wang, Konstantinos Pantzas, Philippe Boucaud, Vincent Calvo, Jérémie Chrétien, Isabelle Sagnes, Jean-Michel Hartmann, Frederic Boeuf, Sébastien Sauvage, Xavier Checoury, Etienne Herth, Detlev Grützmacher, Dan Buca, Nils von den Driesch, Anas Elbaz, Alexei Chelnokov, Moustafa El Kurdi, Vincent Reboud, Gilles Patriarche, Nicolas Pauc, Emilie Sakat
Publikováno v:
ECS Transactions. 98:61-68
Recent achievements of direct band gap with germanium by alloying with tin or by tensile strain engineering has enabled multiple times demonstration of laser emission in the 2-4µm wavelength range. This fast and promising emergence of CMOS-compatibl
Autor:
Mathieu Bertrand, Philippe Boucaud, Isabelle Sagnes, Sébastien Sauvage, Vincent Reboud, Moustafa El Kurdi, Riazul Arefin, Konstantinos Pantzas, Jérémie Chrétien, Binbin Wang, Anas Elbaz, Gilles Patriarche, Alexei Chelnokov, Lara Casiez, Frederic Boeuf, Etienne Herth, Nicolas Pauc, Razvigor Ossikovski, Emilie Sakat, Antonino Foti, Jean-Michel Hartmann, Xavier Checoury, Vincent Calvo
Publikováno v:
ACS Photonics
ACS Photonics, 2020, 7, pp.2713. ⟨10.1021/acsphotonics.0c00708⟩
ACS photonics
ACS photonics, American Chemical Society, 2020, 7 (10), pp.2713-2722. ⟨10.1021/acsphotonics.0c00708⟩
ACS Photonics, 2020, 7, pp.2713. ⟨10.1021/acsphotonics.0c00708⟩
ACS photonics
ACS photonics, American Chemical Society, 2020, 7 (10), pp.2713-2722. ⟨10.1021/acsphotonics.0c00708⟩
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band stru
Autor:
Quang Minh Thai, Vincent Calvo, Jean-Michel Hartmann, Jérémie Chrétien, Alexei Chelnokov, Lara Casiez, Vincent Reboud, Mathieu Bertrand, J. Aubin, Nicolas Pauc
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28 (1: Semiconductor Lasers), pp.1-9. ⟨10.1109/JSTQE.2021.3117683⟩
IEEE Journal of Selected Topics in Quantum Electronics, 2022, 28 (1: Semiconductor Lasers), pp.1-9. ⟨10.1109/JSTQE.2021.3117683⟩
We report on lasing in two types of Germanium-Tin (GeSn) photonic crystal lasers, with band-edge and H4 hexagonal cavities. A GeSn 16% step-graded structure was used as the optical gain material. The strong out-of-plane emission observed in the band-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f510fef077d275208a00fd0656a8beb3
https://hal.science/hal-04025318
https://hal.science/hal-04025318
Autor:
Florian Castioni, Loïc Henry, Lara Casiez, Nicolas Bernier, Vincent Reboud, Jérémie Chrétien, Nicolas Pauc, Vincent Calvo, Jérôme Richy, Audrey Jannaud, Vincent Delaye, Eric Robin, Jean-Michel Hartmann, Pascale Bayle-Guillemaud
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2022, 132 (19), pp.195306. ⟨10.1063/5.0117300⟩
Journal of Applied Physics, 2022, 132 (19), pp.195306. ⟨10.1063/5.0117300⟩
International audience; The structural properties of CVD-grown (Si)GeSn heterostructures were assessed thanks to scanning transmission electron microscopy at the nanometer scale. Quantitative energy dispersive x-ray (EDX) spectroscopy together with p
Autor:
Rami Khazaka, Patrice Gergaud, Mathieu Bertrand, Jérôme Faist, Hans Sigg, Jean-Michel Hartmann, Nicolas Bernier, E. Delamadeleine, Vincent Reboud, Q. M. Thai, H. Dansas, Alexei Chelnokov, Vincent Calvo, Francesco Armand Pilon, Nicolas Pauc, Jérémie Chrétien, Lara Casiez
Publikováno v:
ACS Photonics. 6:2462-2469
Silicon photonics continues to progress tremendously, both in near-infrared datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated group IV semiconductor laser...
Autor:
Jérémie Chrétien, Gilles Patriarche, Vincent Calvo, Dan Buca, Detlev Grützmacher, Etienne Herth, Philippe Boucaud, Frederic Boeuf, Anas Elbaz, Moustafa El Kurdi, Binbin Wang, Vincent Reboud, Nicolas Pauc, Emilie Sakat, Jean-Michel Hartmann, Xavier Checoury, Nils von den Driesch, Konstantinos Pantzas, Alexei Chelnokov, Isabelle Sagnes
Publikováno v:
Novel In-Plane Semiconductor Lasers XX.
Direct band gap achievements in germanium by alloying with tin or by tensile strain engineering has enabled, in recent years, several demonstrations of laser emission in the 2-5µm wavelength range. This fast and promising emergence of CMOS-compatibl
Autor:
Alexei Chelnokov, Mathieu Bertrand, Vincent Reboud, Nicolas Pauc, Quang Minh Thai, Vincent Calvo, Jérémie Chrétien, Lara Casiez
Publikováno v:
Physical Review B
Physical Review B, 2020, 102 (15), pp.155203. ⟨10.1103/PhysRevB.102.155203⟩
Physical Review B, 2020, 102 (15), pp.155203. ⟨10.1103/PhysRevB.102.155203⟩
With recent demonstrations of lasing, germanium-tin (GeSn) stands out as a promising candidate for the integration of a low threshold, room temperature monolithic laser source in silicon (Si) photonics. The impact of physical properties, such as ener