Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ján Kuzmík"'
Autor:
Ján Kuzmík, Ondrej Pohorelec, Stanislav Hasenöhrl, Michal Blaho, Roman Stoklas, Edmund Dobročka, Alica Rosová, Michal Kučera, Filip Gucmann, Dagmar Gregušová, Marian Precner, Andrej Vincze
Publikováno v:
Materials, Vol 16, Iss 6, p 2250 (2023)
Metal organic chemical vapor deposition was used to grow N-polar In0.63Al0.37N on sapphire substrates. P-doping was provided by a precursor flow of Cp2Mg between 0 and 130 nmol/min, reaching a Cp2Mg/III ratio of 8.3 × 10−3. The grain structure of
Externí odkaz:
https://doaj.org/article/85422b94d57f4b2aabbaa657ee3628b4
Autor:
Alica Rosová, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann, Ján Kuzmík
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3496 (2022)
In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10–25 nm)
Externí odkaz:
https://doaj.org/article/522bd0a21e9443d79040cf58c03ce23f
Autor:
Peter Šichman, Roman Stoklas, Stanislav Hasenöhrl, Dagmar Gregušová, Milan Ťapajna, Boris Hudec, Štefan Haščík, Tamotsu Hashizume, Aleš Chvála, Alexander Šatka, Ján Kuzmík
Publikováno v:
physica status solidi (a).
Autor:
Stanislav Hasenöhrl, Michal Blaho, Edmund Dobročka, Filip Gucmann, Michal Kučera, Peter Nádaždy, Roman Stoklas, Alica Rosová, Ján Kuzmík
Publikováno v:
Materials Science in Semiconductor Processing. 156:107290
Autor:
Dagmar Gregušová, Lajos Tóth, Ondrej Pohorelec, Stanislav Hasenöhrl, Štefan Haščík, Ildikó Cora, Zsolt Fogarassy, Roman Stoklas, Alena Seifertová, Michal Blaho, Agáta Laurenčíková, Tatsuya Oyobiki, Béla Pécz, Tamotsu Hashizume, Ján Kuzmík
Publikováno v:
Japanese Journal of Applied Physics; 6/1/2019, Vol. 58 Issue SC, p1-1, 1p
Autor:
Stanislav Hasenöhrl, Prerna Chauhan, Edmund Dobročka, Roman Stoklas, Ľubomír Vančo, Marián Veselý, Farah Bouazzaoui, Marie-Pierre Chauvat, Pierre Ruterana, Ján Kuzmík
Publikováno v:
Applied Physics Express; 1/1/2019, Vol. 12 Issue 1, p1-1, 1p