Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Ján Kolník"'
Publikováno v:
Общая реаниматология, Vol 2, Iss 4, Pp 67-75 (2006)
Background. The world literature contains no reports on the clinical application of continuous flow ventilatory support by an insufflation catheter. Despite the use of different forms of ventilatory support, disconnection of patients from artificial
Externí odkaz:
https://doaj.org/article/abc54f765c0049508b767c359b7f3600
Publikováno v:
Obŝaâ Reanimatologiâ, Vol 2, Iss 4, Pp 13-21 (2006)
The authors describe the theoretical bases of a new ventilatory support procedure that is called by the authors as continuous flow ventilatory support (CFVS). In the theoretical part they provide evidence for this procedure of ventilatory support and
Publikováno v:
Journal of Applied Physics. 81:7827-7834
In this article, the first calculations of hole initiated interband impact ionization in bulk zincblende and wurtzite phase GaN are presented. The calculations are made using an ensemble Monte Carlo simulation including the full details of all of the
Publikováno v:
Journal of Physics and Chemistry of Solids. 58:913-918
We present calculated results for the wavevector and frequency dependent dielectric functions of zincblende and wurtzite GaN based on empirical pseudopotential band structures. The q → -dependent static dielectric functions, ϵ∞( q → ), are fou
Autor:
Christopher J. Summers, Hisham Menkara, Gary S. May, Ilgu Yun, Kevin F. Brennan, İsmail H. Oğuzman, Yang Wang, Ján Kolník, Brent K. Wagner
Publikováno v:
IEEE Transactions on Electron Devices. 44:535-544
The effect of various doping methods on the reliability of gallium arsenide/aluminum gallium (GaAs/AlGaAs) multiple quantum well (MQW) photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accele
Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
Publikováno v:
Journal of Applied Physics. 81:726-733
Calculations of the high-field electronic transport properties of bulk zinc-blende and wurtzite phase gallium nitride are presented focusing particularly on the electron initiated impact ionization rate. The calculations are performed using ensemble
Publikováno v:
Journal of Applied Physics. 78:1033-1038
The ensemble Monte Carlo technique including the details of the first four conduction bands within the full Brillouin zone is used to calculate the basic electronic transport properties for both zincblende and wurtzite crystal phases of bulk gallium
Publikováno v:
Journal of Applied Physics. 77:225-232
In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave‐vector‐dependent numerical transition rate formulat
Publikováno v:
Journal of Applied Physics. 79:8838-8840
We present calculations of the wave‐vector‐dependent interband impact‐ionization transition rate in wurtzite and zinc‐blende phases of bulk GaN. The transition rate is determined by integrating Fermi’s golden rule for a two‐body, screened
Publikováno v:
MRS Proceedings. 423
In this paper, we present the first calculations of the electron and hole initiated interband impact ionization rate in zinc blende phase GaN as a function of the applied electric field strength. The calculations are performed using an ensemble Monte