Zobrazeno 1 - 10
of 1 314
pro vyhledávání: '"J, Michl"'
Autor:
Emily Shelkowitz, Russell P. Saneto, Walla Al-Hertani, Charlotte M. A. Lubout, Nicholas V. Stence, Mark S. Brown, Patrick Long, Diana Walleigh, Julie A. Nelson, Francisco E. Perez, Dennis W. W. Shaw, Emma J. Michl, Johan L. K. Van Hove
Publikováno v:
Orphanet Journal of Rare Diseases, Vol 17, Iss 1, Pp 1-14 (2022)
Abstract Background Nonketotic hyperglycinemia (NKH) is a severe neurometabolic disorder characterized by increased glycine levels. Current glycine reduction therapy uses high doses of sodium benzoate. The ketogenic diet (KD) may represent an alterna
Externí odkaz:
https://doaj.org/article/9af194b7d7c7450f938a5780e5345a8f
Autor:
Emily Shelkowitz, Russell P. Saneto, Walla Al-Hertani, Charlotte M. A. Lubout, Nicholas V. Stence, Mark S. Brown, Patrick Long, Diana Walleigh, Julie A. Nelson, Francisco E. Perez, Dennis W. W. Shaw, Emma J. Michl, Johan L. K. Van Hove
Publikováno v:
Orphanet Journal of Rare Diseases, Vol 18, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/dd79b4bca7bd44dcb0e04befaa5c0737
Akademický článek
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Autor:
A. Grill, J. Michl, J. Diaz-Fortuny, A. Beckers, E. Bury, A. Chasin, T. Grasser, M. Waltl, B. Kaczer, K. De Greve
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa761df1abfba78f323ae0158ffebf1
https://doi.org/10.1109/edtm55494.2023.10102937
https://doi.org/10.1109/edtm55494.2023.10102937
Autor:
F Lohof, J Michl, A Steinhoff, B Han, M von Helversen, S Tongay, K Watanabe, T Taniguchi, S Höfling, S Reitzenstein, C Anton-Solanas, C Gies, C Schneider
We revisit and extend the standard bosonic interpretation of interlayer excitons (ILX) in the moiré potential of twisted heterostructures of transition-metal dichalcogenides. In our experiments, we probe a high quality MoSe2/WSe2 van der Waals bilay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14bc7741caaa1b3038c9e06da4254f2e
http://arxiv.org/abs/2302.14489
http://arxiv.org/abs/2302.14489
Autor:
A. Grill, Ben Kaczer, Dominic Waldhoer, Michael Waltl, Dimitri Linten, Bogdan Govoreanu, Bertrand Parvais, Tibor Grasser, Wolfgang Goes, J. Michl, Iuliana Radu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6365-6371
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6247537db008f4bcb5d4f092932bc43a
https://doi.org/10.1109/ted.2021.3116931
https://doi.org/10.1109/ted.2021.3116931
Autor:
B. Parvais, Bogdan Govoreanu, Iuliana Radu, J. Michl, Dimitri Linten, Ben Kaczer, Tibor Grasser, Dominic Waldhoer, Wolfgang Goes, A. Grill, Michael Waltl
Publikováno v:
IEEE Transactions on Electron Devices. 68:6372-6378
We present time-zero characterization and an investigation on bias temperature instability (BTI) degradation between 4 and 300 K on large area high-k CMOS devices. Our measurements show that negative BTI (NBTI) on pMOSFETs freezes out when approachin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa62d8d297aba1ef59ed8d15655e4466
https://doi.org/10.1109/ted.2021.3117740
https://doi.org/10.1109/ted.2021.3117740
Autor:
K. Tselios, T. Knobloch, J. Michl, D. Waldhoer, C. Schleich, E. Ioannidis, H. Enichlmair, R. Minixhofer, T. Grasser, M. Waltl
Publikováno v:
2022 IEEE International Integrated Reliability Workshop (IIRW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68630d33acce544c3846d149583b75ca
https://doi.org/10.1109/iirw56459.2022.10032748
https://doi.org/10.1109/iirw56459.2022.10032748
Autor:
Eleftherios G. Ioannidis, Konstantinos Tselios, Tibor Grasser, Christian Schleich, Bernhard Stampfer, Michael Waltl, Hubert Enichlmair, J. Michl, Dominic Waldhoer
Publikováno v:
IEEE Transactions on Electron Devices. 68:4057-4063
Defects in the gate oxide give rise to bias temperature instability (BTI), which is considered a serious threat to the device reliability of ultrascaled MOSFETs. Extrapolating the device degradation over the operational lifetime, therefore, requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5fe6c9b81d096985c94ebe05a75b1f7
https://doi.org/10.1109/ted.2021.3091966
https://doi.org/10.1109/ted.2021.3091966
Autor:
D. Waldhor, Michael Waltl, J. Michl, Bernhard Stampfer, Konstantinos Tselios, Hubert Enichlmair, Tibor Grasser, Eleftherios G. Ioannidis
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:199-206
To improve MOS transistors operating characteristics, such as the switching speed and power consumption, the dimensions of integrated devices are continuously decreased, amongst other advances. One of the main drawbacks of geometry scaling is the inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ba2a1f5846019396919697ace7df74
https://doi.org/10.1109/tdmr.2021.3080983
https://doi.org/10.1109/tdmr.2021.3080983