Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J, I. Soos"'
Publikováno v:
Optical Society of America Annual Meeting.
We have demonstrated, the first to our knowledge, acoustooptic second-harmonic generation (AOSHG) modulator. A LiNbO3 longitudinal piezoelectric transducer was bounded in a 1.06–0.53-µm KTP* SHG crystal. The modulator is operated at 100 MHz and wi
Publikováno v:
Optical Society of America Annual Meeting.
By harmonically modelocking a Nd:YAG laser 31 ps pulses at 0.5 GHz repetition rate have been obtained.1 By using YLF, shorter pulses, 9.1 ps, at 0.5 GHz repetition rate have been achieved. Nd:Glass has a much wider bandwidth and potentially can achie
Autor:
R. G. Rosemeier, J. I. Soos
Publikováno v:
High Bandwidth Analog Applications of Photonics II.
anisotropic and has the highest figure of merit, M2, along direction fora longitudinal mode sound wave. Recently, Brimrose has designed and fabricatedan acousto -optic modulator from GaAs operating at a carrier frequency of 2.3GHz with a diffraction
Publikováno v:
SPIE Proceedings.
Applications of Gallium Phosphide (GaP) acousto-optic devices, at wavelengths from 570nm - 1.06um seem to be ideal for fiber optic modulators, scanners, deflectors, frequency shifters, Q-switches and mode lockers. One of the major applications are fo
Publikováno v:
SPIE Proceedings.
The first single element 2-D acousto-optic (A-0) GaP laser beam steerer was designed and fabricated for laser wavelength applications from 570nm to 900nm.
Autor:
J. I. Soos, R. G. Rosemeier
Publikováno v:
Annual Meeting Optical Society of America.
The experimental performance of a GaAs Bragg cell was accurately predicted utilizing a LiNbO3 transducer bonded to a GaAs substrate. The major parameter for the selection of GaAs as a substrate was its high acoustooptic figure of merit.1
Publikováno v:
SPIE Proceedings.
The first GaAs acousto-optic modulators, recently developed, have center frequencies ranging from 1 GHz to 1.5 GHz with 300 MHz bandwidth and diffraction efficiencies reported between 28% to 12% per RF watt respectively. Applications of such devices