Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Izzat, Aziz"'
Publikováno v:
Nano-Micro Letters, Vol 14, Iss 1, Pp 1-12 (2022)
Highlights A stable laminated Al2O3/HfO2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexib
Externí odkaz:
https://doaj.org/article/f62fc7258dd44260adf7f9f7503cc790
Autor:
Jumain Jalil, Mohd1 (AUTHOR) mjumain0686@uitm.edu.my, Azfar Izzat Aziz, Muhamad1 (AUTHOR), Nuruddin Azlan Raofuddin, Danial1 (AUTHOR), Suhada Azmi, Intan2 (AUTHOR), Heiry Mohd Azmi, Mohamad1 (AUTHOR), Saufi Md. Zaini, Mohd3 (AUTHOR), Mariah Ibrahim, Izni4 (AUTHOR)
Publikováno v:
ChemistrySelect. 11/18/2022, Vol. 7 Issue 43, p1-8. 8p.
Publikováno v:
Advanced Intelligent Systems, Vol 2, Iss 7, Pp n/a-n/a (2020)
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of dat
Externí odkaz:
https://doaj.org/article/7b55618031474cac9e567dce6af27578
Autor:
Rahul Sahay, Arief S. Budiman, Izzat Aziz, Etienne Navarro, Stéphanie Escoubas, Thomas W. Cornelius, Fergyanto E. Gunawan, Christian Harito, Pooi See Lee, Olivier Thomas, Nagarajan Raghavan
Publikováno v:
Nanomaterials, Vol 12, Iss 3, p 308 (2022)
Nanolaminates are extensively studied due to their unique properties, such as impact resistance, high fracture toughness, high strength, and resistance to radiation damage. Varieties of nanolaminates are being fabricated to achieve high strength and
Externí odkaz:
https://doaj.org/article/3d93291cf1104e6f810c35992bb861ae
Autor:
Mohd Jumain Jalil, Muhamad Azfar Izzat Aziz, Danial Nuruddin Azlan Raofuddin, Intan Suhada Azmi, Mohamad Heiry Mohd Azmi, Mohd Saufi Md. Zaini, Izni Mariah Ibrahim
Publikováno v:
ChemistrySelect. 7
Autor:
Qiuwei, Shi, Izzat, Aziz, Jin-Hao, Ciou, Jiangxin, Wang, Dace, Gao, Jiaqing, Xiong, Pooi See, Lee
Publikováno v:
Nano-micro letters. 14(1)
Autor:
Benjamin Chan, Wen Siang Lew, Matthew Wei Ming Tan, Haruethai Kongcharoen, Panyawut Tonanon, Birte Coester, Jing-Hao Ciou, Fei Yu, Wei Church Poh, Izzat Aziz, Pooi See Lee, Richard D. Webster
Publikováno v:
ACS applied materialsinterfaces. 13(48)
Magnetically directed localized polymerization is of immense interest for its extensive impacts and applications in numerous fields. The use of means untethered from an external magnetic field to localize initiation of polymerization to develop a cur
Autor:
Gurunathan Thangavel, Izzat Aziz, Juntong Chen, Jiaqing Xiong, Xinran Zhou, Wei Church Poh, Matthew Wei Ming Tan, Jing-Hao Ciou, Dace Gao, Shaohua Chen, Jian Lv, Yat Li, Pooi See Lee
Publikováno v:
Science Advances
Body-secreted sweat increases the conductivity of an Ag- hydrophilic poly(urethane-acrylate) printed wearable conductor.
We rationally synthesized the thermoplastic and hydrophilic poly(urethane-acrylate) (HPUA) binder for a type of printable an
We rationally synthesized the thermoplastic and hydrophilic poly(urethane-acrylate) (HPUA) binder for a type of printable an
Autor:
Rahul Sahay, Olivier P. Thomas, Pooi See Lee, S. Escoubas, Etienne Navarro, Nagarajan Raghavan, Thomas W. Cornelius, Arief Suriadi Budiman, Fergyanto E. Gunawan, Izzat Aziz, Christian Harito
Publikováno v:
MRS Advances
MRS Advances, Cambridge University Press, 2021, 6 (19), pp.495-499. ⟨10.1557/s43580-021-00108-y⟩
MRS Advances, 2021, 6 (19), pp.495-499. ⟨10.1557/s43580-021-00108-y⟩
MRS Advances, Cambridge University Press, 2021, 6 (19), pp.495-499. ⟨10.1557/s43580-021-00108-y⟩
MRS Advances, 2021, 6 (19), pp.495-499. ⟨10.1557/s43580-021-00108-y⟩
International audience; Nanoindentation is widely used to investigate elastic modulus, hardness and work hardening behaviour of nano- and micro-scale laminates. In this work, 16 nm accumulative roll bonding (ARB) Cu/Nb nanolaminate is used as a test
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2497ae4159171314e6e9ca0e9cbc4e13
https://hal.archives-ouvertes.fr/hal-03378495
https://hal.archives-ouvertes.fr/hal-03378495
Publikováno v:
Journal of Applied Physics. 132:014502
Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retai