Theoretical Study of a Wave Absorber with Resistive Film for Metallic Cylinder.

Autor: Iyomasa, Kazuhiro¹, Hashimoto, Osamu¹

Publikováno v: Electronics & Communications in Japan, Part 1: Communications. Apr2002, Vol. 85 Issue 4, p53-60. 8p.

S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration

Autor: Yamanaka, Koji, Iyomasa, Kazuhiro, Ohtsuka, Hiroshi, Nakayama, Masatoshi, Tsuyama, Yoshinori, Kunii, Tetsuo, Kamo, Yoshitaka, Takagi, Tadashi

Publikováno v: Yamanaka, Koji ; Iyomasa, Kazuhiro ; Ohtsuka, Hiroshi ; Nakayama, Masatoshi ; Tsuyama, Yoshinori ; Kunii, Tetsuo ; Kamo, Yoshitaka ; Takagi, Tadashi (2005) S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

In this paper, GaN HEMT 1-chip high power amplifiers at S and C bands are presented, which are featured by the cell division configuration. Spurious oscillations, which often occur for large gate periphery microwave transistors, were suppressed by di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06990eeee057cce2814ce7aeaa558af9
http://amsacta.unibo.it/1251/

A broadband Rx band noise reduction circuit with CMOS switch for multi-band power amplifier.

Autor: Kawamura, Yoshifumi, Shinjo, Shintaro, Iyomasa, Kazuhiro, Hirobe, Masakazu, Kato, Katsuya, Takahashi, Yoshinori, Yamabe, Shigeo, Horiguchi, Kenichi, Hieda, Morishige, Yamanaka, Koji

Publikováno v: 2015 IEEE Radio & Wireless Symposium (RWS); 2015, p165-167, 3p