Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Iwao Sugiyama"'
Publikováno v:
Journal of Electronic Materials. 26:616-620
We investigated the formation of cluster defects in HgCdTe materials by numerical simulation. The equations used for the simulation include change in the activation energy for Hg vacancy diffusion dependent on the local cadmium composition. This stud
Autor:
Iwao Sugiyama, Teruo Ishihara, Hideki Yoshizawa, Yuki Sakai, Seiichi Nishijima, Miyoshi Saito, Yoshio Hirose, Naoki Odate, Hisanori Fujisawa, Katsuhiro Yoda
Publikováno v:
2006 IEEE Asian Solid-State Circuits Conference.
Software defined radio (SDR) is expected to be a progressive technology for wireless communications under multi-communication systems. SDR requires high performance, low power consumption, and short latency hardware. We have developed a single-chip b
Autor:
Iwao Sugiyama, Nishijima Yoshito
Publikováno v:
Applied Physics Letters. 66:2798-2800
Direct epitaxial growth on silicon has advantages when fabricating monolithic integrated infrared focal‐plane arrays. We demonstrated that both (111)A and (111)B oriented CdTe layers can be grown on (100) Si substrates by molecular‐beam epitaxy.
Publikováno v:
SPIE Proceedings.
We have investigated the reverse current-voltage characteristics of both 3 - 5 micrometer and 8 - 10 micrometer band HgCdTe photodiodes under background illumination in the temperature range of 40 K to 120 K. The experimental results show that the di
Publikováno v:
SPIE Proceedings.
We have developed a highly sensitive, compact SO2 gas sensor that uses a PbSnTe laser. To increase its sensitivity, we used wedge-shaped windows that decrease etalon fringes and a SO2 absorption line that is little influenced by water vapor and that
Akademický článek
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