Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Iwao Higashikawa"'
Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
Publikováno v:
Journal of Crystal Growth. 169:485-490
The growth rate and deposition process of polycrystalline silicon carbide by low-pressure chemical vapor deposition with the introduction of hydrogen chloride gas were investigated. Analogous to the case of silicon, the growth rate was well described
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f8e512cd6d953937d27345910e0a188
https://doi.org/10.1016/s0022-0248(96)00415-0
https://doi.org/10.1016/s0022-0248(96)00415-0
Autor:
Iwao Higashikawa, Hiroshi Nomura
Publikováno v:
SPIE Proceedings.
For immersion lithography with aggressive polarization illumination settings, it is important to newly construct two systems for diagnosing lithography tools; Stokes polarimetry of illumination and Mueller matrix polarimetry of projection lenses. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::617b6367a882f28796efd0074fe62760
https://doi.org/10.1117/12.845973
https://doi.org/10.1117/12.845973
Autor:
Iwao Higashikawa, Hiroshi Nomura
Publikováno v:
SPIE Proceedings.
It will be required for more accurate lithography simulation of complicated mask patterns then ever, under hyper-NA (numerical aperture) projection lens and aggressive small-aperture polarized-light illumination, to construct two systems of polarimet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18471140c7f5735e389d9b5b90769210
https://doi.org/10.1117/12.837031
https://doi.org/10.1117/12.837031
Autor:
Ikuo Matsukura, Yuichirou Ishibashi, Wataru Wakamiya, Iwao Higashikawa, Hiromasa Yamamoto, Naoko Shirota, Shinji Okada, Hironao Sasaki
Publikováno v:
Optical Microlithography XVIII.
Fluoropolymers have been successfully utilized for pellicle manufacturing in 248 and 193nm lithography. Moreover, the pellicle using such fluoropolymers will make a large contribution to the development of 193nm immersion technology that is now expec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33a2acc65f83db7663a787ec898c416
https://doi.org/10.1117/12.599311
https://doi.org/10.1117/12.599311
Publikováno v:
Applied Physics Letters. 69:37-39
SiC is one of the potential materials for use as an x‐ray mask substrate. It is preferable for an x‐ray mask substrate to have a large elastic modulus, so as to suppress any distortion of the extremely minute and precise patterns. The improvement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18cec891899ac904e119d262125b5f38
https://doi.org/10.1063/1.118110
https://doi.org/10.1063/1.118110
Autor:
Masaki Mori, Tadashi Imoriya, Iwao Higashikawa, N. Iriki, Toshio Onodera, M. Homma, Tai Sato, T. Matsuda, Norihiko Miyazaki, Hidehiro Higashino, Nobuyuki Yoshioka, K. Okuda
Publikováno v:
SPIE Proceedings.
We reported the Guideline(Ver. 1) of Reticle Data Management(RDM) Activity in 2001. Among we have been focused SoC(System on Chip) Business, we have been improved the efficiency over Design technology, Mask manufacturing and Wafer manufacturing. Espe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261895852794ea3a4a69414ddc646fcc
https://doi.org/10.1117/12.557741
https://doi.org/10.1117/12.557741
Autor:
Jan-Peter Urbach, Takashi Yasui, Axel Zibold, Christof Matthias Dr. Schilz, Wolfgang Degel, Klaus Boehm, Peter Kuschnerus, Silvio Teuber Semmler, Yuji Kobiyama, Iwao Higashikawa
Publikováno v:
SPIE Proceedings.
Measurement by AIMS is the final step of mask defect control, and its accuracy is the critical issue to make guaranty and improve the mask quality. AIMS157 has developed by Carl Zeiss SMS GmbH and is expected to make a contribution to accelerate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecacc9f93ac08cd99bce3ca0e9e6eaac
https://doi.org/10.1117/12.557762
https://doi.org/10.1117/12.557762
Autor:
M. Homma, T. Matsuda, Iwao Higashikawa, Norihiko Miyazaki, Hidehiro Higashino, Nobuyuki Yoshioka, Nobuyuki Iriki, Tai Sato, Toshio Onodera, T. Uga
Publikováno v:
SPIE Proceedings.
We reported the Guideline (Ver.1) of Reticle Data Management (RDM) Activity in 2001. While focusing on SoC (System on Chip) business, we have improved the efficiency in design technology, mask manufacturing and wafer manufacturing. Especially, these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efec3d9859657e61d7e1b879fb4053d9
https://doi.org/10.1117/12.568028
https://doi.org/10.1117/12.568028
Autor:
Christof Matthias Dr. Schilz, Iwao Higashikawa, Axel Zibold, Silvio Teuber, Roderick Koehle, Jan-Peter Urbach
Publikováno v:
SPIE Proceedings.
In modern mask manufacturing, a successful defect mitigation strategy has been become crucial to achieve defect free masks for high-end lithography. The basic steps of such a strategy include inspection, repair, and subsequent post-repair qualificati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65353c58441048bc0aa3738750cd2fc6
https://doi.org/10.1117/12.536670
https://doi.org/10.1117/12.536670
Publikováno v:
SPIE Proceedings.
Direct phase-shift measurement is one of the key technologies to realize Phase-Shift-Mask (PSM) application. Most mask makers are developing practical PSMs for 157nm lithography. Final tuning of the optical parameters and quality assurance of them re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb40afa3c24dd7bcb769c6257b00934
https://doi.org/10.1117/12.518033
https://doi.org/10.1117/12.518033