Výsledky vyhledávání - "Iwan Vervoort"

Grain Growth, Stress, and Impurities in Electroplated Copper

Autor: Annelies Saerens, Sywert Brongersma, Emma Rose Kerr, Karen Maex, Iwan Vervoort

Publikováno v: Journal of Materials Research. 17:582-589

The widely observed secondary grain growth in electroplated Copper layers is shown to be incomplete after the sheet resistance and stress of the layer appear to have stabilized. Instead the layer is in an intermediate state with a grain size distribu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a1596a01e931c474dc02d8b9e7a676c
https://doi.org/10.1557/jmr.2002.0082

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Integration of Cu and low-k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structures

Autor: Serge Vanhaelemeersch, M. Maenhoudt, Marc Meuris, R. A Donaton, Bart Coenegrachts, D. De Roest, I. Vos, Iwan Vervoort, Gerald Beyer, W. Fyen, Michele Stucchi, Karen Maex, Zsolt Tokei, Ivan Pollentier, Herbert Struyf

Publikováno v: Microelectronic Engineering. 55:277-283

In this work we discuss the importance of selecting the hard mask material and choosing the optimum dry etch and post-CMP clean processes on the integration of Cu and organic low-k dielectrics. The hard mask material plays an important role in the in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50bee760e8e5480d96195f38b8e42340
https://doi.org/10.1016/s0167-9317(00)00457-3

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Self-annealing characterization of electroplated copper films

Autor: Karen Maex, Annelies Saerens, Roger Palmans, S. Lagrange, Iwan Vervoort, Emmanuel Richard, Sywert Brongersma, M. Judelewicz

Publikováno v: Microelectronic Engineering. 50:449-457

Self-annealing of electro-chemically deposited copper films is described and studied, with a focus on the effect of process parameters like concentration of the organic additives, current density or thickness of plated copper. Sheet resistance and st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4803da70e5a88d9374c20aa9c80d6ea3
https://doi.org/10.1016/s0167-9317(99)00314-7

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Two-step room temperature grain growth in electroplated copper

Autor: Sywert Brongersma, Gerald Beyer, Hugo Bender, Wilfried Vandervorst, Sébastien Lagrange, Emmanuel Richard, Iwan Vervoort, Karen Maex

Publikováno v: Journal of Applied Physics. 86:3642-3645

Electroplated copper exhibits some surprising changes at room temperature in sheet resistance, stress, and microstructure. This behavior, now known as self-annealing, is shown here to be intimately linked to the composition of the plating bath and th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::531226df7611923f7036a232166e2c8b
https://doi.org/10.1063/1.371272

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Integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond using 193 nm optical lithography with dipole illumination

Autor: M. Maenhoudt, Wen Wu, B. Sijmus, J. Van Olmen, Michele Stucchi, Sywert Brongersma, I. Vos, Ivan Ciofi, Iwan Vervoort, Francesca Iacopi, Zsolt Tokei, Karen Maex, M. Van Hove, J. Van Aelst, Herbert Struyf, Steven Demuynck, B. Eyckens, Youssef Travaly

Publikováno v: Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).

This paper describes the integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond (Applied Materials) dielectric (k=2.85). Optical lithography (193 nm) with off-axis illumination was used to print the trenches. Integration issues

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe9b8f72cebf70145dddc7101234fdb4
https://doi.org/10.1109/iitc.2003.1219745

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Cu/LKD-5109 damascene integration demonstration using FF-02 low-k spin-on hard-mask and embedded etch-stop

Autor: Herbert Struyf, M. Van Hove, Karen Maex, A. Shiota, Michele Stucchi, Joke Van Aelst, Iwan Vervoort, Hugo Bender, T. Kokubo, I. Vos, M. Maenhoudt, Werner Boullart, A. Das, Yukiko Furukawa, W. Peterson, S. Vanhaelemeersch, Zsolt Tokei, Francesca Iacopi, Marc Schaekers

Publikováno v: Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).

The feasibility of integrating low-k spin-on dielectrics into a Cu damascene structure using JSR's LKD-5109 (k = 2.2) has been investigated. The chemical vapor deposited embedded etch-stop (ES) and dual hard-mask (HM) are replaced by JSR's spin-on di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57569ad74dfc3542d45698d94bdc2ad8
https://doi.org/10.1109/iitc.2002.1014884

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Critical issues in the integration of copper and low-k dielectrics

Autor: Karen Maex, G. Beyer, Emmanuel Richard, Herbert Struyf, D. De Roest, Iwan Vervoort, S. Van der Groen, R. A Donaton, Joost Grillaert, Michele Stucchi, B. Coenagrachts, S. Vanhaelemeersch, Wim Fyen

Publikováno v: Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

Single and dual damascene Cu/low k processes are evaluated. Critical integration issues are discussed. Good Cu continuity is obtained over long meanders. The via resistance in dual damascene structures is optimized and the values obtained are almost

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a84dc664735c8243a0814761607b777
https://doi.org/10.1109/iitc.1999.787139

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Autor: W. Vandervorst, S. Lagrange, H. Brongersma, Iwan Vervoort, Hugo Bender, T. Conard, M. Judelwicz, Karen Maex, G. Beyer, Roger Palmans, Emmanuel Richard

Publikováno v: Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

A study of the sheet resistance and stress of electrochemically deposited (ECD) blanket copper layers on a TaN barrier shows that the time dependence of these two parameters are not necessarily the same. This indicates that they are not simply interc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::551319c08e63de3d6f1a74f284045636
https://doi.org/10.1109/iitc.1999.787147

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