Ultralow-power in-memory computing based on ferroelectric memcapacitor network.

Autor: Tian B; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.; Zhejiang Lab Hangzhou China., Xie Z; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.; School of Materials Science and Engineering Shanghai University of Engineering Science Shanghai China., Chen L; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Hao S; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.; CentraleSupélec, CNRS-UMR8580, Laboratoire SPMS Université Paris-Saclay Gif-sur-Yvette France., Liu Y; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Feng G; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Liu X; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Liu H; School of Materials Science and Engineering Shanghai University of Engineering Science Shanghai China., Yang J; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Zhang Y; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Bai W; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Lin T; State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China., Shen H; State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China., Meng X; State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China., Zhong N; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Peng H; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Yue F; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Tang X; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China., Wang J; Frontier Institute of Chip and System Fudan University Shanghai China., Zhu Q; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.; Zhejiang Lab Hangzhou China.; Guangdong Provisional Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology Shenzhen China., Ivry Y; Department of Materials Science and Engineering Solid-State Institute Technion-Israel Institute of Technology Haifa Israel., Dkhil B; CentraleSupélec, CNRS-UMR8580, Laboratoire SPMS Université Paris-Saclay Gif-sur-Yvette France., Chu J; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.; State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China.; Institute of Optoelectronics Fudan University Shanghai China., Duan C; Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.; Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi China.

Publikováno v: Exploration (Beijing, China) [Exploration (Beijing)] 2023 May 11; Vol. 3 (3), pp. 20220126. Date of Electronic Publication: 2023 May 11 (Print Publication: 2023).

Flexoelectric Domain Walls Originated from Structural Phase Transition in Epitaxial BiVO 4 Films.

Autor: Shao PW; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Liu HJ; Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan., Sun Y; International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China., Wu M; International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China., Peng RC; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China., Wang M; Department of Physics, Tsinghua University, Beijing, China., Xue F; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA., Cheng X; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA., Su L; Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA., Gao P; International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.; Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China., Yu P; Department of Physics, Tsinghua University, Beijing, China., Chen LQ; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA., Pan X; Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA.; Department of Physics and Astronomy, University of California at Irvine, Irvine, CA, 92697, USA.; Irvine Materials Research Institute, University of California at Irvine, Irvine, CA, 92697, USA., Ivry Y; Department of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa, 3200003, Israel.; Solid State Institute Technion, Israel Institute of Technology, Haifa, 3200003, Israel., Chen YC; Department of Physics, National Cheng Kung University, Tainan, Taiwan., Chu YH; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2022 May; Vol. 18 (19), pp. e2107540. Date of Electronic Publication: 2022 Mar 24.

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Giant Superelastic Piezoelectricity in Flexible Ferroelectric BaTiO 3 Membranes.

Autor: Elangovan H; Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.; Solid State Institute, Technion - Israel Institute of Technology, Haifa 3200003, Israel., Barzilay M; Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.; Solid State Institute, Technion - Israel Institute of Technology, Haifa 3200003, Israel., Seremi S; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, United States.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States., Cohen N; Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel., Jiang Y; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, United States.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States., Martin LW; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, United States.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States., Ivry Y; Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.; Solid State Institute, Technion - Israel Institute of Technology, Haifa 3200003, Israel.

Publikováno v: ACS nano [ACS Nano] 2020 Apr 28; Vol. 14 (4), pp. 5053-5060. Date of Electronic Publication: 2020 Apr 13.