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pro vyhledávání: '"Ivo Otto"'
Autor:
Andrew M. Greene, Aelan Mosden, Peter Biolsi, Cheryl Alix, Jeffrey Smith, Veeraraghavan S. Basker, Subhadeep Kal, Daniel Schmidt, Michael P. Belyansky, Koji Watanabe, Frougier Julien, Shanti Pancharatnam, Nicolas Loubet, Jingyun Zhang, Flaugh Matthew, Dechao Guo, Kai Zhao, Huimei Zhou, Maruf Bhuiyan, Balasubramanian S. Haran, Chanemougame Daniel, Miaomiao Wang, Curtis Durfee, Huiming Bu, Ivo Otto, Mary Breton
Publikováno v:
ECS Meeting Abstracts. :943-943
Horizontally stacked nanosheet gate-all-around devices enable area scaling of transistor technology, while providing improved electrostatic control over FinFETs for a wide range of channel widths within a single chip for simultaneous low power applic