Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ivo Erkens"'
Autor:
Marcel A. Verheijen, Hcm Harm Knoops, Wmm Erwin Kessels, Fred Roozeboom, Ijm Ivo Erkens, W. Keuning
Publikováno v:
Journal of Chemical Physics, 5, 146
Journal of Chemical Physics, 146(5):052818. American Chemical Society
Journal of Chemical Physics, 146(5):052818. American Chemical Society
To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42ef0a90e38b83509e2330e93dd2d57f
https://doi.org/10.1063/1.4972120
https://doi.org/10.1063/1.4972120
Autor:
Ijm Ivo Erkens, Wmm Erwin Kessels, Ajm Adrie Mackus, van de Thm Tijn Ven, Fred Roozeboom, P Smits, Hcm Harm Knoops
Publikováno v:
ECS Journal of Solid State Science and Technology, 1(6), 255-262. Electrochemical Society, Inc.
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclopentadienyl)trimethylplatinum, (MeCp)PtMe3, precursor and O2 are presented, based on a study of reaction products by time-resolved quadrupole mass spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc115ffcffafbad124da789467458348
https://doi.org/10.1149/2.006206jss
https://doi.org/10.1149/2.006206jss
Publikováno v:
ECS Meeting Abstracts. :1882-1882
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8f3cb469b58918c97a21c940a6af6e1
https://doi.org/10.1149/ma2013-02/24/1882
https://doi.org/10.1149/ma2013-02/24/1882