Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

Autor: Orlov, L.K., nikova, A.A.Mel’, Orlov, M.L., Alyabina, N.A., Ivina, N.L., Neverov, V.N., Horváth, Zs.J.

Publikováno v: In Physica E: Low-dimensional Systems and Nanostructures June 2013 51:87-93

Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers

Autor: Ivina, N.L., Orlov, L.K., Shevtsov, V.B., Alyabina, N.A.

Publikováno v: In Microelectronics Journal March-June 2005 36(3-6):338-341

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Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si1-xGex structures grown by gas source molecular beam epitaxy.

Autor: Orlov, L.K., Ivina, N.L., Potapov, A.V., Ivin, S.V.

Publikováno v: ASDAM 2000. Conference Proceedings Third International EuroConference on Advanced Semiconductor Devices & Microsystems (Cat. No.00EX386); 2000, p179-182, 4p

Kinetics of hydride disintegration in a 2D Si channel formation by the Si–GeH4 MBE and demonstration of a Si/SiGe interface blurring in electrical characteristics of heterostructures

Autor: Orlov, L.K.¹ orlov@ipm.sci-nnov.ru, Ivina, N.L.¹, Potapov, A.V.¹, Smyslova, T.N.², Vinogradsky, L.M.¹ vinogr@iskra5.vniief.ru, Horvath, Z.J.³ horvzsj@mfa.kfki.hu

Publikováno v: Microelectronics Journal. Mar2005, Vol. 36 Issue 3-6, p518-521. 4p.