Zobrazeno 1 - 10
of 638
pro vyhledávání: '"Iversen, B."'
Autor:
Michiardi, M., Boschini, F., Kung, H. -H., Na, M. X., Dufresne, S. K. Y., Currie, A., Levy, G., Zhdanovich, S., Mills, A. K., Jones, D. J., Mi, J. L., Iversen, B. B., Hofmann, Ph., Damascelli, A.
Publikováno v:
Nature Communications 13, 3096 (2022)
In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin currents, w
Externí odkaz:
http://arxiv.org/abs/2105.09320
Akademický článek
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Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators
Autor:
Vondracek, M., Honolka, J., Cornils, L., Warmuth, J., Zhou, L., Kamlapure, A., Khajetoorians, A. A., Wiesendanger, R., Wiebe, J., Michiardi, M., Bianchi, M., Miwa, J., Barreto, L., Hofmann, P., Piamonteze, C., Minar, J., Mankovsky, S., Borek, St., Ebert, H., Schueler, M., Wehling, T., Mi, J. -L., Iversen, B. -B.
Publikováno v:
Phys. Rev. B 94, 161114 (2016)
We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially fill
Externí odkaz:
http://arxiv.org/abs/1603.09689
Akademický článek
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Autor:
Löptien, P., Zhou, L., Wiebe, J., Khajetoorians, A. A., Mi, J. L., Iversen, B. B., Hofmann, Ph., Wiesendanger, R.
The electrostatic behavior of a prototypical three-dimensional topological insulator Bi$_2$Se$_3$(111) is investigated by a scanning tunneling microscopy (STM) study of the distribution of Rb atoms adsorbed on the surface. The positively charged ions
Externí odkaz:
http://arxiv.org/abs/1312.3813
Autor:
Schlenk, T., Bianchi, M., Koleini, M., Eich, A., Pietzsch, O., Wehling, T. O., Frauenheim, T., Balatsky, A., Mi, J. -L., Iversen, B. B., Wiebe, J., Khajetoorians, A. A., Hofmann, Ph., Wiesendanger, R.
A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can
Externí odkaz:
http://arxiv.org/abs/1211.2142
Autor:
Nechaev, I. A., Hatch, R. C., Bianchi, M., Guan, D., Friedrich, C., Aguilera, I., Mi, J. L., Iversen, B. B., Blügel, S., Hofmann, Ph., Chulkov, E. V.
Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown b
Externí odkaz:
http://arxiv.org/abs/1210.4477
Autor:
Honolka, J., Khajetoorians, A. A., Sessi, V., Wehling, T. O., Stepanow, S., Mi, J. -L., Iversen, B. B., Schlenk, T., Wiebe, J., Brookes, N., Lichtenstein, A. I., Hofmann, Ph., Kern, K., Wiesendanger, R.
The robustness of the gapless topological surface state hosted by a 3D topological insulator against perturbations of magnetic origin has been the focus of recent investigations. We present a comprehensive study of the magnetic properties of Fe impur
Externí odkaz:
http://arxiv.org/abs/1112.4621
Autor:
King, P. D. C., Hatch, R. C., Bianchi, M., Ovsyannikov, R., Lupulescu, C., Landolt, G., Slomski, B., Dil, J. H., Guan, D., Mi, J. L., Rienks, E. D. L., Fink, J., Lindblad, A., Svensson, S., Bao, S., Balakrishnan, G., Iversen, B. B., Osterwalder, J., Eberhardt, W., Baumberger, F., Hofmann, Ph.
Publikováno v:
Phys. Rev. Lett. 107 (2011) 096802
We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achie
Externí odkaz:
http://arxiv.org/abs/1103.3220
Substitution of Sb in FeSb$_2$ by less than 0.5% of Te induces a transition from a correlated semiconductor to an unconventional metal with large effective charge carrier mass $m^*$. Spanning the entire range of the semiconductor-metal crossover, we
Externí odkaz:
http://arxiv.org/abs/1102.0171