Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Ivana, Capan"'
Autor:
Ivana Capan, Tomislav Brodar
Publikováno v:
Electronic Materials, Vol 3, Iss 1, Pp 115-123 (2022)
In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC materials. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behi
Externí odkaz:
https://doaj.org/article/c5fe616881384794a686b80ccee3eab8
Publikováno v:
Crystals, Vol 11, Iss 11, p 1404 (2021)
We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-i
Externí odkaz:
https://doaj.org/article/58c3fc5d3b4f461f99a536a07e3b2f74
Publikováno v:
Crystals, Vol 11, Iss 8, p 945 (2021)
The development of efficient and environmentally friendly technologies for radiation detection is a great challenge [...]
Externí odkaz:
https://doaj.org/article/57fdbfaa5db8460e98b5e2cd1a3e12cd
Autor:
Robert Bernat, Tihomir Knežević, Vladimir Radulović, Luka Snoj, Takahiro Makino, Takeshi Ohshima, Ivana Capan
Publikováno v:
Materials; Volume 16; Issue 6; Pages: 2202
We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm. 6LiF and 10B4C films, which were placed on top of the diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c44baa2ee1701c7f07d9cd384320966
Autor:
Robert Bernat, Ivana Capan, Luka Bakrač, Tomislav Brodar, Takahiro Makino, Takeshi Ohshima, Željko Pastuović, Adam Sarbutt
Publikováno v:
Crystals, Vol 11, Iss 1, p 10 (2020)
We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector prototype to alpha and gamma radiation. We studied detectors of three different active area sizes (1 × 1, 2 × 2 and 3 × 3 mm2), while all detectors had the same
Externí odkaz:
https://doaj.org/article/74f635f5a6f24749b509f65d8d38eab7
Autor:
Tomislav Brodar, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, Željko Pastuović
Publikováno v:
Crystals, Vol 10, Iss 9, p 845 (2020)
Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (
Externí odkaz:
https://doaj.org/article/2d9b6f4e0ccc46b9888b349b5c21a0dd
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 5, Iss 1, Pp 1787-1794 (2014)
Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their pot
Externí odkaz:
https://doaj.org/article/e7d86bbfd23b413aa2eefe2dc67f042b
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 68(6), 2810-2817. IEEE
IEEE Transactions on Electron Devices, 68(6), 2810-2817. IEEE
Pure boron (PureB) deposition as the anode region of Si photodiodes creates negative fixed charge at the boron/silicon interface, which is responsible for effective suppression of electron injection from the bulk, thus ensuring low saturation/dark cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e6872be007d1859f40d9de6e0f94b52
https://doi.org/10.1109/ted.2021.3074117
https://doi.org/10.1109/ted.2021.3074117
Publikováno v:
Crystals, Vol 9, Iss 7, p 328 (2019)
We present preliminary results on minority carrier traps in as-grown n-type 4H−SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investiga
Externí odkaz:
https://doaj.org/article/c91beb725f4f4fe19124092d814fabcd
Autor:
Tihomir Knezevic, Eva Jelavić, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino, Ivana Capan
Publikováno v:
Materials. 16:3347
We report on boron-related defects in the low-doped n-type (nitrogen-doped) 4H-SiC semitransparent Schottky barrier diodes (SBDs) studied by minority carrier transient spectroscopy (MCTS). An unknown concentration of boron was introduced during chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ba9983719cab999c3c5058db3127634
https://doi.org/10.3390/ma16093347
https://doi.org/10.3390/ma16093347