Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ivan V. Shchemerov"'
Autor:
Alexander Y. Polyakov, Eugene B. Yakimov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Andrej V. Miakonkikh, Alexander Azarov, In-Hwan Lee, Anton A. Vasilev, Anastasiia I. Kochkova, Ivan V. Shchemerov, Andrej Kuznetsov, Stephen J. Pearton
Publikováno v:
Crystals, Vol 13, Iss 9, p 1400 (2023)
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor compl
Externí odkaz:
https://doaj.org/article/86f41d6f923e407ea9ebcca20a4c85fd
Autor:
Alexander Y. Polyakov, Vladimir I. Nikolaev, Igor N. Meshkov, Krzysztof Siemek, Petr B. Lagov, Eugene B. Yakimov, Alexei I. Pechnikov, Oleg S. Orlov, Alexey A. Sidorin, Sergey I. Stepanov, Ivan V. Shchemerov, Anton A. Vasilev, Alexey V. Chernykh, Anton A. Losev, Alexandr D. Miliachenko, Igor A. Khrisanov, Yu.S. Pavlov, U. A. Kobets, Stephen J. Pearton
Publikováno v:
Journal of Applied Physics. 132:035701
Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 × 1015 cm−2 and with 7 MeV C4+ ions with a fluence of 1.3 × 1013 cm−2 and characterized by a suite of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c7171b2e8116ed0f696fe61fe8b2a7
https://doi.org/10.1063/5.0100359
https://doi.org/10.1063/5.0100359