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pro vyhledávání: '"Ivan V. Schemerov"'
Autor:
Natalya V. Latukhina, Svetlana P. Kobeleva, G. A. Rogozhina, I. A. Shishkin, Ivan V. Schemerov
Publikováno v:
Modern Electronic Materials, Vol 4, Iss 4, Pp 143-150 (2018)
In this work we have used contact and contactless techniques to measure the electrical resistivity of single crystal silicon wafers with porous layers of variable thickness synthesized on the surface. The porous layers have been synthesized on the su
Externí odkaz:
https://doaj.org/article/ac503582ee6240809e75a019f59a8230