Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Ivan Shorubalko"'
Autor:
Miklós Csontos, Yannik Horst, Nadia Jimenez Olalla, Ueli Koch, Ivan Shorubalko, András Halbritter, Juerg Leuthold
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling pote
Externí odkaz:
https://doaj.org/article/d7c71b44d2e445039fac967ca64ecbcd
Autor:
Jian Zhang, Oliver Braun, Gabriela Borin Barin, Sara Sangtarash, Jan Overbeck, Rimah Darawish, Michael Stiefel, Roman Furrer, Antonis Olziersky, Klaus Müllen, Ivan Shorubalko, Abdalghani H. S. Daaoub, Pascal Ruffieux, Roman Fasel, Hatef Sadeghi, Mickael L. Perrin, Michel Calame
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In rece
Externí odkaz:
https://doaj.org/article/2e1a37dcd8944ccc9dfe8920568dd61f
Autor:
Rohit Abraham John, Yiğit Demirağ, Yevhen Shynkarenko, Yuliia Berezovska, Natacha Ohannessian, Melika Payvand, Peng Zeng, Maryna I. Bodnarchuk, Frank Krumeich, Gökhan Kara, Ivan Shorubalko, Manu V. Nair, Graham A. Cooke, Thomas Lippert, Giacomo Indiveri, Maksym V. Kovalenko
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Existing memristors cannot be reconfigured to meet the diverse switching requirements of various computing frameworks, limiting their universality. Here, the authors present a nanocrystal memristor that can be reconfigured on-demand to address these
Externí odkaz:
https://doaj.org/article/ef91007fdca34e84a25830295996d7a9
Autor:
Oliver Braun, Roman Furrer, Pascal Butti, Kishan Thodkar, Ivan Shorubalko, Ilaria Zardo, Michel Calame, Mickael L. Perrin
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-7 (2022)
Abstract Mapping the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, mos
Externí odkaz:
https://doaj.org/article/8edfa0b3f75f4bf9935eea913f195482
Autor:
Veronika Ulianova, Farhan Rasheed, Sami Bolat, Galo Torres Sevilla, Yurii Didenko, Xiaowei Feng, Ivan Shorubalko, Dominik Bachmann, Dmytro Tatarchuk, Mehdi B. Tahoori, Jasmin Aghassi-Hagmann, Yaroslav E. Romanyuk
Publikováno v:
IEEE Access, Vol 8, Pp 111783-111790 (2020)
Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO
Externí odkaz:
https://doaj.org/article/155d5567667543779c9bef95b9e29878
Autor:
Sami Bolat, Evangelos Agiannis, Shih-Chi Yang, Moritz H. Futscher, Abdesselam Aribia, Ivan Shorubalko, Yaroslav E. Romanyuk
Publikováno v:
Frontiers in Electronics, Vol 2 (2022)
Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge
Externí odkaz:
https://doaj.org/article/66c16d42af454161a09ce873896cc0ae
Autor:
Matthias J. Grotevent, Claudio U. Hail, Sergii Yakunin, Dominik Bachmann, Michel Calame, Dimos Poulikakos, Maksym V. Kovalenko, Ivan Shorubalko
Publikováno v:
Advanced Science, Vol 8, Iss 6, Pp n/a-n/a (2021)
Abstract Infrared light detection enables diverse technologies ranging from night vision to gas analysis. Emerging technologies such as low‐cost cameras for self‐driving cars require highly sensitive, low‐cost photodetector cameras with spectra
Externí odkaz:
https://doaj.org/article/11786666646e4edebf93ed900726a5d3
Autor:
Veronika Ulianova, Yurii Didenko, Sami Bolat, Galo Torres Sevilla, Dmytro Tatarchuk, Ivan Shorubalko, Evgeniia Gilshtein, Yaroslav E. Romanyuk
Publikováno v:
AIP Advances, Vol 10, Iss 7, Pp 075104-075104-7 (2020)
The fabrication of solution-processed electronic devices based on amorphous In–Ga–Zn–O (a-IGZO) requires high-temperature post-deposition annealing to activate IGZO layers and minimize impurities. Deep-ultraviolet (DUV) treatment can reduce the
Externí odkaz:
https://doaj.org/article/1e5756bf4d6443a7bc33c434e671d5eb
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 682-687 (2017)
Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a freestanding two-dimensional (2D) layer. Experimentally determined sputtering yields of the perforation process can be quantitat
Externí odkaz:
https://doaj.org/article/050a4845c9594f5db615101ef1a8efb0
Autor:
Bruno Küng, Simon Gustavsson, Theodore Choi, Ivan Shorubalko, Oliver Pfäffli, Fabian Hassler, Gianni Blatter, Matthias Reinwald, Werner Wegscheider, Silke Schön, Thomas Ihn, Klaus Ensslin
Publikováno v:
Entropy, Vol 12, Iss 7, Pp 1721-1732 (2010)
Charge sensing with quantum point-contacts (QPCs) is a technique widely used in semiconductor quantum-dot research. Understanding the physics of this measurement process, as well as finding ways of suppressing unwanted measurement back-action, are th
Externí odkaz:
https://doaj.org/article/05e2ed559a5843cb90a80d16ee89c7a0