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pro vyhledávání: '"Ivan S. Gorban"'
Autor:
Ivan S. Gorban, Galina N. Mishinova
Publikováno v:
SPIE Proceedings.
The result of the studies of dislocation luminescence in SiC crystals are presented in the report. This semiconductor forms great number of polytypes which differs by periodical alternation of cubic and hexagonal layers in basic planes. High probabil
Publikováno v:
SPIE Proceedings.
The oscillator regularity E equals h(omega) i (n + 1/2) at the traps energy spectra was observed in a number of complex crystals: in Ba2NaNb5O15 and YAlO3 one series was observed; in CsCdCl3 -- two; in ZnWO4, ZnWO4:Ni -- three; in Y3Al5O15 -- five se