Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ivan RÝGER"'
Autor:
Ivan Ryger, Richard Balogh, Stefan Chamraz, Alexandra Artusio-Glimpse, Michelle Stephens, Paul A. Williams, John Lehman
Publikováno v:
Sensors, Vol 20, Iss 24, p 7337 (2020)
We document a feedback controller design for a nonlinear electrostatic transducer that exhibits a strong unloaded resonance. Challenging features of this type of transducer include the presence of multiple fixed points (some of which are unstable), n
Externí odkaz:
https://doaj.org/article/0b777cd6e6214888ab3de1b4e42ff24f
Autor:
Vladimír KUTIŠ, Gabriel GÁLIK, Ivan RÝGER, Justín MURÍN, Juraj HRABOVSKÝ, Juraj PAULECH, Tibor LALINSKÝ
Publikováno v:
Transactions of the VŠB-Technical University of Ostrava, Mechanical Series, Vol 59, Iss 1, Pp 33-38 (2013)
In this contribution modeling and simulation of surface acoustic waves (SAW) sensor using finite element method will be presented. SAW sensor is made from piezoelectric GaN layer and SiC substrate. Two different analysis types are investigated - moda
Externí odkaz:
https://doaj.org/article/0879316c98c9414a8cf2cb6ac761834f
Autor:
A. Bencurova, Ivan Rýger, S. Hascik, M. Tomaska, Gabriel Vanko, Robert Andok, Pavol Nemec, Tibor Lalinský
Publikováno v:
Sensors and Actuators A: Physical. 227:55-62
In this article, we present an application of GaN/SiC heterostructures for Surface Acoustic Wave (SAW) hydrogen sensors with enhanced sensitivity. We demonstrate that the mass-loading sensitivity of such sensors can be increased by using shorter acou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f702dce09b246e5c1140eeb2b3bb7b7d
https://doi.org/10.1016/j.sna.2015.02.041
https://doi.org/10.1016/j.sna.2015.02.041
Publikováno v:
Sensors and Actuators B: Chemical. 202:1-8
This article reports on how an additional interfacial nickel oxide (NiO) influenced the hydrogen sensory performance of a Pt/AlGaN/GaN Schottky gate diode of a circular HEMT device. The oxide was formed by the oxidation of a thin Ni layer on top of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe79e9df7375b10cc25cdf672be687e7
https://doi.org/10.1016/j.snb.2014.05.052
https://doi.org/10.1016/j.snb.2014.05.052
Publikováno v:
Key Engineering Materials. 605:491-494
In this article we demonstrate the high sensitivity AlGaN/GaN circular HEMT (C-HEMT) hydrogen gas sensor with new gate interfacial Pt/NiO layer. The wide band-gap III-nitride semiconductor heterostructure allows the sensor operation at elevated tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7072a8f4e1b9002c61657d493cb0953
https://doi.org/10.4028/www.scientific.net/kem.605.491
https://doi.org/10.4028/www.scientific.net/kem.605.491
Publikováno v:
Key Engineering Materials. 605:404-407
A circular high electron mobility transistor (C-HEMT) prepared on the AlGaN/GaN membrane surface has been investigated and its potential for pressure sensing has been already demonstrated. The key issue in the design process of such heterostructure b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a6adccae5d3430671920e230ab8bd33
https://doi.org/10.4028/www.scientific.net/kem.605.404
https://doi.org/10.4028/www.scientific.net/kem.605.404
Publikováno v:
Procedia Engineering. 87:260-263
In this work we demonstrate the fabrication process and electrical characterization of GaN/SiC heterostructure-based surface acoustic wave filters for highly-sensitive hydrogen sensors. In the acoustic propagation path, palladium metal is used as a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c1b45c55021c826e62b81ecd5291a57
https://doi.org/10.1016/j.proeng.2014.11.657
https://doi.org/10.1016/j.proeng.2014.11.657
Autor:
Tibor Lalinský, Edmund Dobročka, J. Osvald, J. Dzuba, M. Vallo, Ivan Rýger, Andrej Vincze, Gabriel Vanko
Publikováno v:
Applied Surface Science. 283:160-167
We report on a high temperature forming of iridium oxides (IrO 2 ) gates of circular AlGaN/GaN high electron mobility transistors (C-HEMTs) to be predetermined for high temperature applications. IrO 2 gate interfacial layer is formed by high temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e040341e7cbf3803e71b808c0bec1725
https://doi.org/10.1016/j.apsusc.2013.06.069
https://doi.org/10.1016/j.apsusc.2013.06.069
Autor:
M. Vallo, Gabriel Vanko, P. Hudek, Johann Zehetner, Tibor Lalinský, P. Choleva, J. Dzuba, Vladimír Kutiš, Ivan Rýger
Publikováno v:
Microelectronic Engineering. 110:260-264
We present a non-conventional bulk micromachining process of SiC substrate directed to fabrication of MEMS sensors based on III-nitrides (III-N) material systems for harsh environment. They consist of AlGaN/GaN/SiC high electron mobility transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e76b56cd5737a6e2d728ac04c13333
https://doi.org/10.1016/j.mee.2013.01.046
https://doi.org/10.1016/j.mee.2013.01.046
Autor:
Ivan Rýger, Juraj Paulech, Vladimír Kutiš, Gabriel Gálik, Tibor Lalinský, Justín Murín, Juraj Hrabovský
Publikováno v:
Transactions of the VSB : Technical University of Ostrava, Vol 59, Iss 1, Pp 33-38 (2013)
In this contribution modeling and simulation of surface acoustic waves (SAW) sensor using finite element method will be presented. SAW sensor is made from piezoelectric GaN layer and SiC substrate. Two different analysis types are investigated - moda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::586414f3a469d613688c4415357f70ff
https://doi.org/10.22223/tr.2013-1/1932
https://doi.org/10.22223/tr.2013-1/1932