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pro vyhledávání: '"Ivan N. Arsentyev"'
Autor:
Pavel V. Seredin, Nikolay A. Kurilo, Obaid Radam Ali, Nikita S. Buylov, Dmitry L. Goloshchapov, Sergey Alexandrovich Ivkov, Alexandr S. Lenshin, Ivan N. Arsentyev, Alexey V. Nashchekin, Shukrilo Sh. Sharofidinov, Andrey M. Mizerov, Maksim S. Sobolev, Evgeniy V. Pirogov, Igor V. Semeykin
Publikováno v:
Конденсированные среды и межфазные границы, Vol 25, Iss 1 (2023)
In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film. It was found that selected technolo
Externí odkaz:
https://doaj.org/article/22a630bd5f8c4442abcb3c330a997c04
