Zobrazeno 1 - 10
of 269
pro vyhledávání: '"Ivan Mukhin"'
Autor:
Maria Baeva, Dmitry Gets, Artem Polushkin, Aleksandr Vorobyov, Aleksandr Goltaev, Vladimir Neplokh, Alexey Mozharov, Dmitry V. Krasnikov, Albert G. Nasibulin, Ivan Mukhin, Sergey Makarov
Publikováno v:
Opto-Electronic Advances, Vol 6, Iss 9, Pp 1-14 (2023)
Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture. Here, we develop a perovskite electrochemica
Externí odkaz:
https://doaj.org/article/b8bd30ea0a81429cb560ca2068452ca6
Autor:
Yali Sun, Artem Larin, Alexey Mozharov, Eduard Ageev, Olesia Pashina, Filipp Komissarenko, Ivan Mukhin, Mihail Petrov, Sergey Makarov, Pavel Belov, Dmitry Zuev
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-13 (2023)
Abstract Electric field is a powerful instrument in nanoscale engineering, providing wide functionalities for control in various optical and solid-state nanodevices. The development of a single optically resonant nanostructure operating with a charge
Externí odkaz:
https://doaj.org/article/8051140e118b4e68932e43c6bd801697
Autor:
Maria Baeva, Dmitry Gets, Artem Polushkin, Aleksandr Vorobyov, Aleksandr Goltaev, Vladimir Neplokh, Alexey Mozharov, Dmitry V. Krasnikov, Albert G. Nasibulin, Ivan Mukhin, Sergey Makarov
Publikováno v:
Opto-Electronic Advances, Vol 7, Iss 3, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/4a29b71ebf8b414a955da2bbfbed9897
Autor:
Dmitrii D. Kartsev, Artur Y. Prilepskii, Ilia M. Lukyanov, Eduard G. Sharapenkov, Anastasiia V. Klaving, Aleksandr Goltaev, Alexey Mozharov, Liliia Dvoretckaia, Ivan Mukhin, Pavel A. Levkin
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 16, Pp n/a-n/a (2023)
Abstract Surfaces with special wettability properties, such as omniphobicity or omniphilicity, are essential for functional devices that use both aqueous and organic media. Micropatterning of omniphobic and omniphilic properties can provide a wide ra
Externí odkaz:
https://doaj.org/article/a8e07d3b7fad4d4786020f92c12c9831
Autor:
Efim Khazanov, Andrey Shaykin, Igor Kostyukov, Vladislav Ginzburg, Ivan Mukhin, Ivan Yakovlev, Alexander Soloviev, Ivan Kuznetsov, Sergey Mironov, Artem Korzhimanov, Denis Bulanov, Ilya Shaikin, Anton Kochetkov, Alexey Kuzmin, Mikhail Martyanov, Vladimir Lozhkarev, Mikhail Starodubtsev, Alexander Litvak, Alexander Sergeev
Publikováno v:
High Power Laser Science and Engineering, Vol 11 (2023)
The eXawatt Center for Extreme Light Studies project aimed to create a large scientific infrastructure based on lasers with giant peak power. The project relies on the significant progress achieved in the last decade. The planned infrastructure will
Externí odkaz:
https://doaj.org/article/0ea46fc73e984a4998a59a18ecd73f7b
Autor:
Viktoriia Mastalieva, Vladimir Neplokh, Arseniy Aybush, Vladimir Fedorov, Anastasiya Yakubova, Olga Koval, Alexander Gudovskikh, Sergey Makarov, Ivan Mukhin
Publikováno v:
Nanomaterials, Vol 13, Iss 9, p 1563 (2023)
Nonlinear silicon photonics has a high compatibility with CMOS technology and therefore is particularly attractive for various purposes and applications. Second harmonic generation (SHG) in silicon nanowires (NWs) is widely studied for its high sensi
Externí odkaz:
https://doaj.org/article/8709f9be74864bbd827bc77f46905ef7
Autor:
Liliia Dvoretckaia, Vladislav Gridchin, Alexey Mozharov, Alina Maksimova, Anna Dragunova, Ivan Melnichenko, Dmitry Mitin, Alexandr Vinogradov, Ivan Mukhin, Georgy Cirlin
Publikováno v:
Nanomaterials, Vol 12, Iss 12, p 1993 (2022)
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor ligh
Externí odkaz:
https://doaj.org/article/aec98d39492848c6b645d32eada72ef0
Autor:
Sergei Koromyslov, Eduard Ageev, Ekaterina Ponkratova, Artem Larin, Ivan Shishkin, Denis Danilov, Ivan Mukhin, Sergey Makarov, Dmitry Zuev
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1756 (2022)
It is very natural to use silicon as a primary material for microelectronics. However, silicon application in nanophotonics is limited due to the indirect gap of its energy band structure. To improve the silicon emission properties, it can be combine
Externí odkaz:
https://doaj.org/article/4f7fc3ea05874fa7a93bf7706f523620
Autor:
Ekaterina Babich, Ekaterina Lubyankina, Vladimir Kaasik, Alexey Mozharov, Ivan Mukhin, Valentina Zhurikhina, Andrey Lipovskii
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 2973 (2021)
It is shown for the first time that the vacuum poling of soda-lime silicate glass and the subsequent processing of the glass in a melt containing silver ions results in the formation of silver nanoparticles buried in the subanodic region of the glass
Externí odkaz:
https://doaj.org/article/997077f8560d4c348822fb9416b81fec
Autor:
Vladimir Neplokh, Vladimir Fedorov, Alexey Mozharov, Fedor Kochetkov, Konstantin Shugurov, Eduard Moiseev, Nuño Amador-Mendez, Tatiana Statsenko, Sofia Morozova, Dmitry Krasnikov, Albert G. Nasibulin, Regina Islamova, George Cirlin, Maria Tchernycheva, Ivan Mukhin
Publikováno v:
Nanomaterials, Vol 11, Iss 10, p 2549 (2021)
We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays
Externí odkaz:
https://doaj.org/article/2dc2a9f4413046d1b05dc5d9e32cb055