Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ivan Lovshenko"'
Autor:
Ivan Lovshenko, Viktor Stempitsky, Ha Dinh Dao, Polina Roshchenko, Tuan Trung Tran, Veranika Shandarovich
Publikováno v:
Semiconductor Science and Technology. 36:095004
Autor:
Ivan Lovshenko, Viktor Stempitsky, Dao Dinh Ha, Nguyen Trong Quang, Veranika Khanko, Tran Tuan Trung
Publikováno v:
2019 International Conference on Advanced Technologies for Communications (ATC).
The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm2/mg, 10.1 MeV.cm2/mg, 18.8 MeV.cm2/mg, 55.0 MeV.cm2/mg, corresponding to nitrogen ions15N+4with energ
Publikováno v:
ITM Web of Conferences, Vol 30, p 10002 (2019)
The results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separat
Publikováno v:
2015 International Conference on Advanced Technologies for Communications (ATC).
The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results
Publikováno v:
EWDTS
Results of the computer simulation of the manufacturing process formation of the bipolar transistor with insulated gate (IGBT) on the base of technology “Silicon on insulator” (SOI) are presented. Current-voltage characteristics of the investigat