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pro vyhledávání: '"Ivan Lalovic"'
Autor:
Ivan Lalovic
Publikováno v:
Digital Water ISBN: 9780429439278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0946751b03dbbde8cde05a9c0d6ebbf0
https://doi.org/10.4324/9780429439278-8
https://doi.org/10.4324/9780429439278-8
Autor:
Oleg Kritsun, Bruno La Fontaine, Bill Partlo, Harry J. Levinson, Slava Rokitski, Ivan Lalovic, Nigel R. Farrar
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2145-2150
In this article the authors discuss the impact of coherence, or laser speckle, of current generation 193nm argon fluoride (ArF) excimer sources on lithographic patterning. They report a new metrology capability to characterize single-pulse speckle pa
Publikováno v:
SPIE Proceedings.
With the implementation of multi-patterning ArF-immersion for sub 20nm integrated circuits (IC), advances in equipment monitoring and control are needed to support on-wafer yield performance. These in-situ equipment monitoring improvements, along wit
Autor:
Nakgeuon Seong, Joshua Thornes, Paolo Alagna, Gregory Rechsteiner, Koen D'havé, Ivan Lalovic, Lieve Van Look, Joost Bekaert, Omar Zurita
Publikováno v:
SPIE Proceedings.
Reducing lithography pattern variability has become a critical en abler of ArF immersion scali ng and is required to ensure consistent lithography process yield for sub-30nm device tech nologies. As DUV multi-patterning requirements continue to shrin
Autor:
Allen Chang, Hsin-Chang Lee, I-S. Huang, H. H. Liu, John Lin, Arthur Lin, R. C. Peng, Benjamin Szu-Min Lin, Ivan Lalovic
Publikováno v:
SPIE Proceedings.
As IC dimensions continue to shrink beyond the 22nm node, optical single exposure cannot sustain the resolution required and various double patterning techniques have become the main stream prior to the availability of EUV lithography. Among various
Autor:
Jason J. Lee, Ivan Lalovic, Nigel R. Farrar, Nakgeuon Seong, Hans Van Der Laan, Tom van der Hoeff, Michiel Kupers, Carsten Kohler
Publikováno v:
SPIE Proceedings.
In this paper we discuss a laser focus drilling technique which has recently been developed for advanced immersion lithography scanners to increase the depth of focus and therefore reduce process variability of contact-hole patterns. Focus drilling i
Publikováno v:
SPIE Proceedings.
The laser bandwidth and the wavelength stability are among the important factors contributing to the CD Uniformity budget for a 45 nm and 32nm technology node NV Memory. Longitudinal chromatic aberrations are also minimized by lens designers to reduc
Autor:
Xu Xie, Hua-yu Liu, Paul van Adrichem, Anthony Ngai, Qian Zhao, Peter Nikolsky, Ivan Lalovic, Michael Crouse, Robert John Socha, Stefan Hunsche
Publikováno v:
SPIE Proceedings.
Computational lithography (CL) is becoming more and more of a fundamental enabler of advanced semiconductor processing technology, and new requirements for CL models are arising from new applications such as model-based process tuning. In this paper
Publikováno v:
25th European Mask and Lithography Conference.
The need for improved lithography resolution has driven the development of light sources with ever shorter wavelength. Excimer lasers have extended the exposure wavelength down to 193nm. Further resolution extension will require the introduction of E
Autor:
Joseph J. Bendik, Ivan Lalovic, Nigel R. Farrar, Mark D. Smith, Oleg Kritsun, Sarah N. McGowan
Publikováno v:
Photomask Technology 2008.
In this study, we discuss modeling finite laser bandwidth for application to optical proximity modeling and correction. We discuss the accuracy of commonly-used approximations to the laser spectrum shape, namely the modified Lorentzian and Gaussian f