Zobrazeno 1 - 10
of 633
pro vyhledávání: '"Ivan K. Schuller"'
Autor:
Jaeseoung Park, Ashwani Kumar, Yucheng Zhou, Sangheon Oh, Jeong-Hoon Kim, Yuhan Shi, Soumil Jain, Gopabandhu Hota, Erbin Qiu, Amelie L. Nagle, Ivan K. Schuller, Catherine D. Schuman, Gert Cauwenberghs, Duygu Kuzum
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract CMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise, leading to computational accuracy loss, i
Externí odkaz:
https://doaj.org/article/e06bf38281154f59bfcf421cf1e74b46
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Manipulation of antiferromagnetic (AFM) materials as active elements provides a crucial combination of electrical, thermal, and magnetic properties for spintronics. This study shows how the spin current generated in heavy metal is induced by
Externí odkaz:
https://doaj.org/article/e3c81e86e3b240caa19942104b022d12
Autor:
Sayan Basak, Yuxin Sun, Melissa Alzate Banguero, Pavel Salev, Ivan K. Schuller, Lionel Aigouy, Erica W. Carlson, Alexandre Zimmers
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 10, Pp n/a-n/a (2023)
Abstract Ramp‐reversal memory has recently been discovered in several insulator‐to‐metal transition materials where a non‐volatile resistance change can be set by repeatedly driving the material partway through the transition. This study uses
Externí odkaz:
https://doaj.org/article/68e445bebe01491bb0abf9383f4878b6
The impact of the suppression of highly connected protein interactions on the corona virus infection
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract Several highly effective Covid-19 vaccines are in emergency use, although more-infectious coronavirus strains, could delay the end of the pandemic even further. Because of this, it is highly desirable to develop fast antiviral drug treatment
Externí odkaz:
https://doaj.org/article/96972d2a09a7431192f6b889975a7287
Autor:
Pavel Salev, Lorenzo Fratino, Dayne Sasaki, Rani Berkoun, Javier del Valle, Yoav Kalcheim, Yayoi Takamura, Marcelo Rozenberg, Ivan K. Schuller
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Resistive switching usually occurs by the formation of conducting filaments in the direction of current flow. Here the authors study an intriguing type of volatile metal-to-insulator resistive switching in (La,Sr)MnO3, which occurs by the formation o
Externí odkaz:
https://doaj.org/article/488a75f0a23d4e3da76435f6fd695bbf
Autor:
Jun-Wen Xu, Yizhang Chen, Nicolás M. Vargas, Pavel Salev, Pavel N. Lapa, Juan Trastoy, Julie Grollier, Ivan K. Schuller, Andrew D. Kent
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
Abstract In a spintronic resonator a radio-frequency signal excites spin dynamics that can be detected by the spin-diode effect. Such resonators are generally based on ferromagnetic metals and their responses to spin torques. New and richer functiona
Externí odkaz:
https://doaj.org/article/d7bdc98b8cdc430dbd62e7a408df62c2
Autor:
Axel Hoffmann, Shriram Ramanathan, Julie Grollier, Andrew D. Kent, Marcelo J. Rozenberg, Ivan K. Schuller, Oleg G. Shpyrko, Robert C. Dynes, Yeshaiahu Fainman, Alex Frano, Eric E. Fullerton, Giulia Galli, Vitaliy Lomakin, Shyue Ping Ong, Amanda K. Petford-Long, Jonathan A. Schuller, Mark D. Stiles, Yayoi Takamura, Yimei Zhu
Publikováno v:
APL Materials, Vol 10, Iss 7, Pp 070904-070904-24 (2022)
Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient de
Externí odkaz:
https://doaj.org/article/4ef8d29d955f499fbe0f4e2c16f98a8f
Autor:
Yoav Kalcheim, Alberto Camjayi, Javier del Valle, Pavel Salev, Marcelo Rozenberg, Ivan K. Schuller
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Despite intensive research on the electrically driven insulator-to-metal transition, this phenomenon is not well understood. Using quasi 1D nanowires of two Mott insulators, the authors reveal the central role of defects in enabling a non-thermal dop
Externí odkaz:
https://doaj.org/article/f3056166bb4a4d12879ee502584d4cc0
Autor:
Tomer Lewi, Nikita A. Butakov, Hayden A. Evans, Mark W. Knight, Prasad P. Iyer, David Higgs, Hamid Chorsi, Juan Trastoy, Javier Del Valle Granda, Ilya Valmianski, Christian Urban, Yoav Kalcheim, Paul Y. Wang, Philip W.C. Hon, Ivan K. Schuller, Jon A. Schuller
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 2, Pp 1-16 (2019)
Metasurfaces are two-dimensional nanostructures that allow unprecedented control of light through engineering the amplitude, phase, and polarization across meta-atom resonators. Adding tunability to metasurface components would boost their potential
Externí odkaz:
https://doaj.org/article/13ecc98222fb44799cdbe896efbd8d42
Publikováno v:
APL Materials, Vol 8, Iss 10, Pp 101103-101103-8 (2020)
Vanadium sesquioxide (V2O3) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolativ
Externí odkaz:
https://doaj.org/article/2c126d7dba834fe084da1e5547c5ee0f