Zobrazeno 1 - 10
of 233
pro vyhledávání: '"Ivan I Kravchenko"'
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 3, Pp n/a-n/a (2022)
Optical metasurfaces, composed of subwavelength scattering elements, demonstrate remarkable control over the transmitted amplitude, phase, and polarization of light. However, manipulating the amplitude upon transmission, without the use of surface wa
Externí odkaz:
https://doaj.org/article/a051c70da4924f8baf4420cb8b2303b5
Autor:
Troy C. Messina, Bernadeta R. Srijanto, Charles Patrick Collier, Ivan I. Kravchenko, Christopher I. Richards
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1755 (2022)
Zero-mode waveguides (ZMWs) are widely used in single molecule fluorescence microscopy for their enhancement of emitted light and the ability to study samples at physiological concentrations. ZMWs are typically produced using photo or electron beam l
Externí odkaz:
https://doaj.org/article/5bc7dfcf23b04573a7b0a8b061e42a85
Autor:
Danielle R. Lincoln, Jennifer J. Charlton, Nahla A. Hatab, Brittany Skyberg, Nickolay V. Lavrik, Ivan I. Kravchenko, James A. Bradshaw, Michael J. Sepaniak
Publikováno v:
ACS Omega, Vol 2, Iss 10, Pp 7313-7319 (2017)
Externí odkaz:
https://doaj.org/article/b833a3c608a1482eb6af0a02a52c39e2
Autor:
Natalia M. Litchinitser, Jiannan Gao, Dmitrii Tsvetkov, Danilo Gomes M. Pires, Ivan I. Kravchenko
Publikováno v:
Metamaterials, Metadevices, and Metasystems 2022.
Autor:
Hooman Barati Sedeh, Danilo G. Pires, Nitish Chandra, Pavel D. Terekhov, Jiannan Gao, Ivan I. Kravchenko, Natalia M. Litchinitser
Publikováno v:
Metamaterials, Metadevices, and Metasystems 2022.
Publikováno v:
ACS nano. 16(9)
Optical metasurfaces offer a compact platform for manipulation of the amplitude, phase, and polarization state of light. Independent control over these properties, however, is hindered by the symmetric transmission matrix associated with single-layer
Publikováno v:
ACS Photonics. 8:1824-1831
Metasurfaces, based on subwavelength structuring, provide a versatile platform for wavefront manipulation in an ultrathin form factor. The manufacturing of metasurfaces, however, generally requires...
Autor:
Patrick H. Carey IV, Jiancheng Yang, F. Ren, David C. Hays, S. J. Pearton, Soohwan Jang, Akito Kuramata, Ivan I. Kravchenko
Publikováno v:
AIP Advances, Vol 7, Iss 9, Pp 095313-095313-6 (2017)
AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmissio
Externí odkaz:
https://doaj.org/article/727658906e094e1192d9ed7f1a44d219
Publikováno v:
Science advances. 8(30)
Rapid advances in deep learning have led to paradigm shifts in a number of fields, from medical image analysis to autonomous systems. These advances, however, have resulted in digital neural networks with large computational requirements, resulting i
Autor:
Pooran Chandra Joshi, Tolga Aytug, M. Parans Paranthaman, Neil R. Taylor, Mi-Hee Ji, Ivan I. Kravchenko, Lei Cao
Publikováno v:
IEEE Transactions on Power Electronics. 36:41-44
Large-size vertical β -Ga2O3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped n -type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) n -type β -Ga2O3 substrate. In this letter,