Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ivan Colantoni"'
Autor:
Daria Gusenkova, Francesco Valenti, Martin Spiecker, Simon Günzler, Patrick Paluch, Dennis Rieger, Larisa-Milena Pioraş-Ţimbolmaş, Liviu P. Zârbo, Nicola Casali, Ivan Colantoni, Angelo Cruciani, Stefano Pirro, Laura Cardani, Alexandru Petrescu, Wolfgang Wernsdorfer, Patrick Winkel, Ioan M. Pop
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 120 (5), Art.-Nr.: 054001
Applied Physics Letters, 120 (5), Art.-Nr.: 054001
We demonstrate flux-bias locking and operation of a gradiometric fluxonium artificial atom using two symmetric granular aluminum (grAl) loops to implement the superinductor. The gradiometric fluxonium shows two orders of magnitude suppression of sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50701b150199cbd27f64a9e0756bb9db
Autor:
Ivan Colantoni
A convincing observation of neutrino-less double beta decay (0𝜈DBD) relies on the possibility of operating high-energy resolution detectors in background-free conditions. Scintillating cryogenic calorimeters are one of the most promising tools to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afd98d63146050e35449ae53b8e26dbf
Autor:
Ivan Colantoni, Fabio De Matteis, Federico Micciulla, Ivan Davoli, Massimiliano Lucci, Salvatore Macis, Alberto Clozza, Marco Miliucci
Publikováno v:
Thin Solid Films. 697:137833
The present paper reports the investigation of sputtered CdS as a buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells, for a dry-low temperature all in-line production technology method. The CdS film is deposited using radio-frequency magnetron sputterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7b4c204b9221533b4f000174b117746
https://doi.org/10.1016/j.tsf.2020.137833
https://doi.org/10.1016/j.tsf.2020.137833
Autor:
Fabio De Matteis, L. D’Amico, Mauro Casalboni, Ivan Colantoni, Paolo Prosposito, William Ted Masselink, Fariba Hatami, Roberta De Angelis
Publikováno v:
Journal of Sensor Technology. :1-5
Surface InP quantum dots grown by gas source molecular beam epitaxy on In0.48Ga0.52P buffer layer lattice matched to GaAs substrate shows a broad-band near-infrared photoluminescence ranging from 750 to 865 nm dependent on their dimensions. A reversi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcbbbecf9cf9ad3f1148b5b94b824f3e
https://doi.org/10.4236/jst.2013.31001
https://doi.org/10.4236/jst.2013.31001