Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Ivan Ciofi"'
Publikováno v:
Proceedings of the 2023 International Symposium on Physical Design.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70af933ba59d3e8c25f12905b4992515
https://doi.org/10.1145/3569052.3578909
https://doi.org/10.1145/3569052.3578909
Autor:
Melina Lofrano, Herman Oprins, Xinyue Chang, Bjorn Vermeersch, Olalla Varela Pedreira, Alicja Lesniewska, Vladimir Cherman, Ivan Ciofi, Kristof Croes, Seongho Park, Zsolt Tokei
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fda1283b928650c0ee4b145b0fb094a1
https://doi.org/10.1109/irps48203.2023.10117701
https://doi.org/10.1109/irps48203.2023.10117701
Autor:
Anita Farokhnejad, Simone Esposto, Ivan Ciofi, Odysseas Zografos, Pieter Weckx, Julien Ryckaert, Pieter Schuddinck, Yang Xiang, Zsolt Tokei
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::279329cd0a4584ccf404a8e8f5518ea0
https://doi.org/10.1109/iitc52079.2022.9881286
https://doi.org/10.1109/iitc52079.2022.9881286
Autor:
Xinyue Chang, Herman Oprins, Melina Lofrano, Bjorn Vermeersch, Ivan Ciofi, Olalla Varela Pedreira, Zsolt Tokei, Ingrid De Wolf
Publikováno v:
2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d7ee05d798a7398a0b1bf85b20eb37a
https://doi.org/10.1109/itherm54085.2022.9899564
https://doi.org/10.1109/itherm54085.2022.9899564
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261a1e70ea662d74c370c5ec75f047d8
https://doi.org/10.1109/irps48227.2022.9764511
https://doi.org/10.1109/irps48227.2022.9764511
Publikováno v:
IEEE Transactions on Electron Devices. 67:1737-1744
We present a predictive model for line-to-line dielectric reliability that takes variability into account. The lifetime distribution is obtained by performing series-parallel reliability computations, starting from the failure distributions of single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5e573895f7450de4f06b4e3d21e933
https://doi.org/10.1109/ted.2020.2975677
https://doi.org/10.1109/ted.2020.2975677
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1034
We investigated the impact of current spreading on the resistance of short-range connections by performing simulations in Synopsys Sentaurus, based on a calibrated resistivity model. As a main case study, we considered vertical-horizontal-vertical (V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ce8e65f1c8ad5ea8bc2d37ddfcde516
https://doi.org/10.35848/1347-4065/acad0b
https://doi.org/10.35848/1347-4065/acad0b
Publikováno v:
2021 ACM/IEEE International Workshop on System Level Interconnect Prediction (SLIP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a00410461983c1c2b5e7b2a51d80e8f1
https://doi.org/10.1109/slip52707.2021.00008
https://doi.org/10.1109/slip52707.2021.00008
Autor:
Philippe Leray, N. Jourdan, O. Varela Pedreira, E. Dentoni-Litta, Thomas Witters, Werner Gillijns, Nancy Heylen, L. Ramakers, E. Grieten, Zaid El-Mekki, Gayle Murdoch, V. Vega-Gonzalez, Anne-Laure Charley, Ivan Ciofi, Zsolt Tokei, H. Vats, S. V. Gompel, M. H. van der Veen, L. Halipre, J. Swerts, A. Haider, Bilal Chehab, S. Park, N. Bazzazian, Quoc Toan Le, B. De Wachter, T. Peissker, Harinarayanan Puliyalil, Naoto Horiguchi, Miroslav Cupak, J. Versluijs, G. T. Martinez, Y. Kimura, R. Kim, J. Geypen, J. Uk-Lee, N. Nagesh, D. Montero, L. Rynders, M. Ercken, D. Batuk, K. Croes, Patrick Verdonck, Manoj Jaysankar, Y. Drissi, T. Webers
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CD bottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison between ruthenium (Ru) and cobalt (Co) chemical vapor deposition (CVD) metallizations. Ru gave a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775097fabe7d875876eeac9844668bb1
https://doi.org/10.1109/iitc51362.2021.9537535
https://doi.org/10.1109/iitc51362.2021.9537535
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
In this paper, we present a modeling study to investigate the self-heating effect on advanced metallization schemes with airgaps using an experimentally calibrated finite element model. We compared N3 technology node with N2 integrated with airgaps.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b619584b5e7b75f990ddee2d003ae727
https://doi.org/10.1109/iitc51362.2021.9537558
https://doi.org/10.1109/iitc51362.2021.9537558