Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ivan C. Robin"'
Autor:
Saiful Alam, Youssef El Gmili, Suresh Sundaram, Gilles Patriarche, Miryam Elouneg-Jamroz, Xin Li, Abdallah Ougazzaden, Ivan C. Robin, Paul L. Voss, Jean-Paul Salvestrini
Publikováno v:
Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2017, 112, pp.279-286. ⟨10.1016/j.spmi.2017.09.032⟩
Superlattices and Microstructures, Elsevier, 2017, 112, pp.279-286. ⟨10.1016/j.spmi.2017.09.032⟩
We report an elongation of emission wavelength by inserting a ∼70 nm thick high quality semi-bulk (SB) InyGa1-yN buffer layer underneath the InxGa1-xN/InyGa1-yN (x > y) multi-quantum-well (MQW).While the MQW structure without the InGaN SB buffer is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::538cc0a0c6fcd7ccd35f62a0dcc8a869
https://doi.org/10.1016/j.spmi.2017.09.032
https://doi.org/10.1016/j.spmi.2017.09.032
Autor:
Xin Li, Saiful Alam, Ivan C. Robin, Jean-Paul Salvestrini, Suresh Sundaram, Youssef El Gmili, Abdallah Ougazzaden, Paul L. Voss, Miryam Elouneg-Jamroz
Publikováno v:
Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2017, 104, pp.291-297. ⟨10.1016/j.spmi.2017.02.036⟩
Superlattices and Microstructures, Elsevier, 2017, 104, pp.291-297. ⟨10.1016/j.spmi.2017.02.036⟩
In0.16Ga0.84N/In0.05Ga0.95N Multiple Quantum Well (MQW) structure grown on a 70 nm thick high quality semi-bulk InGaN buffer layer is reported. Temperature dependent photoluminescence (PL) reveals 67.5% of room temperature Internal Quantum Efficiency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1334e447196b5d588f175a96e8718247
https://hal.archives-ouvertes.fr/hal-01830907
https://hal.archives-ouvertes.fr/hal-01830907
Publikováno v:
MRS Proceedings. 1788:19-21
We have demonstrated the color conversion of blue micro-LEDs by means of QDs. In this paper, we will present characterizations that highlight this phenomenon. We already obtained conversion with a complete disappearance of the blue incident signal an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b869f857a49a2220b3f1355a4663c6e7
https://doi.org/10.1557/opl.2015.505
https://doi.org/10.1557/opl.2015.505
Publikováno v:
physica status solidi (a). 215:1700652
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7985c48b7200ba96705673cd26ecac1c
https://doi.org/10.1002/pssa.201700652
https://doi.org/10.1002/pssa.201700652
Publikováno v:
Journal of Crystal Growth. 312:1721-1725
The high dislocation density (2×10 7 /cm 2 for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205148fa8776a5dc93367508e0c3b0c9
https://doi.org/10.1016/j.jcrysgro.2010.02.011
https://doi.org/10.1016/j.jcrysgro.2010.02.011
Publikováno v:
Journal of Electronic Materials. 39:908-911
We have used x-ray diffraction to assess the thickness dependence of strain in molecular-beam epitaxial (MBE) CdTe(211)/Ge(211). For 25-nm-thick layers, we find tensile stress of 100 MPa and in-plane strain of ~1.5 × 10−3. This stress relaxes duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4d262dc0b7e7c9bf20fdb03db4d5b2
https://doi.org/10.1007/s11664-010-1200-x
https://doi.org/10.1007/s11664-010-1200-x
Publikováno v:
Journal of Electronic Materials. 38:1652-1660
The surface morphology of the B-face of (211) cadmium telluride on germanium (211) is investigated by atomic force microscopy (AFM) and generalized ellipsometry (GE). It is apparent that one can obtain roughnesses on the order of two monolayers or le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7234e0c4b4ed2bb82a42b5c1da2a7c2a
https://doi.org/10.1007/s11664-009-0783-6
https://doi.org/10.1007/s11664-009-0783-6
Autor:
Saiful Alam, Ivan C. Robin, Suresh Sundaram, Xin Li, Jean-Paul Salvestrini, Abdallah Ougazzaden, Paul L. Voss, Miryam E. Jamroz, Youssef El Gmili
Publikováno v:
physica status solidi (a). 214:1600868
The effect of indium (In) in the barrier of InGaN/GaN multiple quantum well (MQW) has been studied for MQWs with and without semi-bulk InGaN buffer. From simulation, the optimum In content in the barrier with 3–5 nm width is 5–7% to get the optim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af0cecd7a3aff43567fb8528c24adc9
https://doi.org/10.1002/pssa.201600868
https://doi.org/10.1002/pssa.201600868
Autor:
Xin Li, Abdallah Ougazzaden, Suresh Sundaram, Saiful Alam, Helge Haas, Youssef El Gmili, Jean-Paul Salvestrini, Ivan C. Robin, Paul L. Voss, Miryam E. Jamroz
Publikováno v:
physica status solidi (a). 214:1600496
We report on the optimization of p-GaN layers for high indium (In) content InGaN applications by optimizing temperature, precursor CP2Mg flow rate and III/V ratio and report also on the optimization of p-contact performance. Using MOVPE, a 150 nm thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e85afb067254918a76a78e7fe1068d2
https://doi.org/10.1002/pssa.201600496
https://doi.org/10.1002/pssa.201600496