Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Ivan, Shtepliuk"'
Autor:
Ivan Shtepliuk
Publikováno v:
Data in Brief, Vol 51, Iss , Pp 109801- (2023)
This paper presents a dataset offering profound insights into the formation and physical properties of two-dimensional (2D) noble metals under various configurations, with a primary focus on their role as catalysts for the hydrogen evolution reaction
Externí odkaz:
https://doaj.org/article/55cb191dcb8b45deae97c0b9d6474c45
Autor:
Ivan Shtepliuk, Rositsa Yakimova
Publikováno v:
ACS Omega, Vol 6, Iss 38, Pp 24739-24751 (2021)
Externí odkaz:
https://doaj.org/article/7aeac785accc44d08f791bbd23e5fb17
Autor:
Ivan Shtepliuk
Publikováno v:
Sensors, Vol 23, Iss 12, p 5631 (2023)
The optical properties of graphene nanodots (GND) and their interaction with phosphate ions have been investigated to explore their potential for optical sensing applications. The absorption spectra of pristine GND and modified GND systems were analy
Externí odkaz:
https://doaj.org/article/fbf6adf75f844dbf8aad541f95f2273b
Autor:
Ivan Shtepliuk
Publikováno v:
Applied Sciences, Vol 13, Iss 12, p 7243 (2023)
This paper presents a theoretical study on the effects of selected defects (oxygen vacancies and substitutional FeZn atoms) on the structural and electronic properties of a 2D ZnO/graphene heterostructure. Spin-polarized Hubbard- and dispersion-corre
Externí odkaz:
https://doaj.org/article/446183ffb7a34f629b75574769f23e7c
Autor:
Ivan Shtepliuk, Mikhail Vagin, Ziyauddin Khan, Alexei A. Zakharov, Tihomir Iakimov, Filippo Giannazzo, Ivan G. Ivanov, Rositsa Yakimova
Publikováno v:
Nanomaterials, Vol 12, Iss 13, p 2229 (2022)
Novel two-dimensional materials (2DMs) with balanced electrical conductivity and lithium (Li) storage capacity are desirable for next-generation rechargeable batteries as they may serve as high-performance anodes, improving output battery characteris
Externí odkaz:
https://doaj.org/article/2b60d10606634de8af3d603206a69e1f
Autor:
Ivan Shtepliuk
Publikováno v:
Physical Chemistry Chemical Physics. 25:8281-8292
High-performance electrocatalysts for the hydrogen evolution reaction are of interest in the development of next-generation sustainable hydrogen production systems. Although expensive platinum-group metals have been recognized as the most effective H
Autor:
Quaid Zaman, null Tahir, Fernando Lazaro Freire, Ivan Shtepliuk, Andre N. Barbosa, Marcelo E. H. Maia da Costa, Cesar Augusto Diaz Mendoza, Jefferson F. D. F Araujo, Guilherme C. Concas, Marco Cremona, Zubair Ahmed, Omar Ginoble Pandoli, Ricardo Q. Aucelio, Victor Dmitriev, Karlo Q. da Costa, André Felipe S. Cruz, Gabriella Fibbi, Anna Laurenzana, Francesca Margheri, Anastasia Chillà, Francesca Scavone, Elena Frediani, Rajwali Khan, Nicola Daldosso, Elena Chistè, Gino Mariotto, Evelyn C. S. Santos, Tommaso Del Rosso
Publikováno v:
The Journal of Physical Chemistry C. 126:13905-13919
Publikováno v:
Applied Sciences, Vol 11, Iss 13, p 5784 (2021)
Material growth on a dangling-bond-free interface such as graphene is a challenging technological task, which usually requires additional surface pre-treatment steps (functionalization, seed layer formation) to provide enough reactive sites. Being on
Externí odkaz:
https://doaj.org/article/e3f03e651b6342839432a92c56e71dce
Autor:
Ivan Shtepliuk, Nuala M. Caffrey, Tihomir Iakimov, Volodymyr Khranovskyy, Igor A. Abrikosov, Rositsa Yakimova
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-17 (2017)
Abstract The promise of graphene and its derivatives as next generation sensors for real-time detection of toxic heavy metals (HM) requires a clear understanding of behavior of these metals on the graphene surface and response of the graphene to adso
Externí odkaz:
https://doaj.org/article/b2c242088c9246bf82212b2c5ba19074
Autor:
Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, Tihomir Iakimov, Anita Lloyd Spetz, Rositsa Yakimova
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1800-1814 (2016)
A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky jun
Externí odkaz:
https://doaj.org/article/f2c25e2d7d094f46958fda00e9a3e89e