Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Iurii G. Korzhenevskii"'
Autor:
Ivan D. Skurlov, Iurii G. Korzhenevskii, Anastasiia S. Mudrak, Aliaksei Dubavik, Sergei A. Cherevkov, Petr S. Parfenov, Xiaoyu Zhang, Anatoly V. Fedorov, Aleksandr P. Litvin, Alexander V. Baranov
Publikováno v:
Materials, Vol 12, Iss 19, p 3219 (2019)
Iodide atomic surface passivation of lead chalcogenides has spawned a race in efficiency of quantum dot (QD)-based optoelectronic devices. Further development of QD applications requires a deeper understanding of the passivation mechanisms. In the fi
Externí odkaz:
https://doaj.org/article/b95ac70ef4b94892a75e2a6278239d74
Autor:
D. A. Onishchuk, Peter S. Parfenov, Aliaksei Dubavik, Iurii G. Korzhenevskii, Aleksandr P. Litvin, Anton A. Babaev
Publikováno v:
Semiconductors. 53:1946-1949
In the present study, the hybrid photovoltaic devices based on PbS quantum dots (QDs) and poly(3-hexylthiophene-2,5diyl) have been fabricated. The effect of the insertion of [6,6]-phenyl C71 butyric acid methyl ester (PCBM) into the hybrid blend has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c22db25f9b2ccee0de83303df4902d5f
https://doi.org/10.1134/s1063782619140112
https://doi.org/10.1134/s1063782619140112
Autor:
Aliaksei Dubavik, Peter S. Parfenov, Alexander V. Baranov, Anatoly V. Fedorov, Anastasiia Sokolova, Victor V. Zakharov, Xiaoyu Zhang, Iurii G. Korzhenevskii, Aleksandr P. Litvin, D. A. Onishchuk, I. D. Skurlov, Elena V. Ushakova, Sergei A. Cherevkov
Publikováno v:
The Journal of Physical Chemistry C. 123:3115-3121
Ternary hybrid photovoltaics based on polymers, fullerenes, and colloidal semiconductor quantum dots (QDs) bring together high efficiency and technological flexibility. To increase the performance of such hybrid solar cells, a thorough control over b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e45a4c4bc03c3bccb6a95f9fb82507a3
https://doi.org/10.1021/acs.jpcc.8b11685
https://doi.org/10.1021/acs.jpcc.8b11685
Autor:
Alexander V. Baranov, Anastasiia S. Mudrak, I. D. Skurlov, Sergei A. Cherevkov, Xiaoyu Zhang, Anatoly V. Fedorov, Iurii G. Korzhenevskii, Aleksandr P. Litvin, Petr S. Parfenov, Aliaksei Dubavik
Publikováno v:
Materials; Volume 12; Issue 19; Pages: 3219
Materials
Materials, Vol 12, Iss 19, p 3219 (2019)
Materials
Materials, Vol 12, Iss 19, p 3219 (2019)
Iodide atomic surface passivation of lead chalcogenides has spawned a race in efficiency of quantum dot (QD)-based optoelectronic devices. Further development of QD applications requires a deeper understanding of the passivation mechanisms. In the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc98dbb805961695fac243fed2518482