Zobrazeno 1 - 10
of 263
pro vyhledávání: '"Iuliana, Radu"'
Autor:
Nuwan Darshana Wickramasinghe, Tine Van Bortel, Diana Rose, Chantal Van Audenhove, Graham Thornicroft, Samantha Treacy, Norman Sartorius, Nicholas Glozier, Athula Sumathipala, Teresa Duarte, Antonio Lasalvia, Chiara Bonetto, Shuntaro Ando, Isabella Goldie, Kristian Wahlbeck, Giuseppe Rossi, Fredrica Nyqvist, Wolfgang Gaebel, Jaap van Weeghel, Evelien Brouwers, Nicole Cockayne, Elaine Brohan, Gert Scheerder, Nashi Khan, Uta Ouali, Vesna Svab, Doaa Nader, Nadia Kadri, Maria Fatima Monteiro, Lee Knifton, Neil Quinn, Esa Aromaa, Johanna Nordmyr, Carolina Herberts, Oliver Lewis, Jasna Russo, Dorottya Karsay, Rea Maglajlic, Silvia Zoppei, Doriana Cristofalo, Else Tambuyzer, Valentina Hristakeva, Dimitar Germanov, Harald Zaske, Marina Economou, Eleni Louki, Lily Peppou, Klio Geroulanou, Judit Harangozo, Julia Sebes, Gabor Csukly, Mariangela Lanfredi, Laura Pedrini, Arunas Germanavicius, Natalja Markovskaja, Vytis Valantinas, Jenny Boumans, Eleonoor Willemsen, Annette Plooy, Fatima Jorge Monteiro, Radu Teodorescu, Iuliana Radu, Elena Pana, Janka Hurova, Dita Leczova, Nina Konecnik, Blanca Reneses, Juan J Lopez-Ibor, Nerea Palomares, Camila Bayon, Alp Uçok, Gulsah Karaday
Publikováno v:
BMJ Open, Vol 14, Iss 6 (2024)
Objectives Workplace stigmatisation and discrimination are significant barriers to accessing employment opportunities, reintegration and promotion in the workforce for people with mental illnesses in comparison to other disabilities. This paper prese
Externí odkaz:
https://doaj.org/article/fec1e5afa136478d91b2ba98492903b7
Autor:
Tzu‐Ang Chao, Chih‐Piao Chuu, San‐Lin Liew, I‐Fan Hu, Sheng‐Kai Su, Shengman Li, Shih‐Chu Lin, Vincent D.‐H. Hou, H.‐S. Philip Wong, Iuliana Radu, Wen‐Hao Chang, Gregory Pitner, Han Wang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 6, Pp n/a-n/a (2024)
Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocit
Externí odkaz:
https://doaj.org/article/0fe972dcf6f249529d0f673eb7ad5042
Autor:
Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here
Externí odkaz:
https://doaj.org/article/f132e126bb2d4a5abc877181c5dbd890
Autor:
Mihaela Chivu-Economescu, Teodora Vremera, Simona Maria Ruta, Camelia Grancea, Mihaela Leustean, Daniela Chiriac, Adina David, Lilia Matei, Carmen C. Diaconu, Adina Gatea, Ciprian Ilie, Iuliana Radu, Ana Maria Cornienco, Luminita Smaranda Iancu, Catalin Cirstoiu, Corina Silvia Pop, Radu Petru, Victor Strambu, Stefan Malciolu, Corneliu Petru Popescu, Simin Aysel Florescu, Alexandru Rafila, Florentina Ligia Furtunescu, Adriana Pistol
Publikováno v:
Biomedicines, Vol 10, Iss 7, p 1526 (2022)
The continuous variability of SARS-CoV-2 and the rapid waning of specific antibodies threatens the efficacy of COVID-19 vaccines. We aimed to evaluate antibody kinetics one year after SARS-CoV-2 vaccination with an mRNA vaccine in healthcare workers
Externí odkaz:
https://doaj.org/article/5bf42ade0ac245bdb169fae25e7a199a
Autor:
Ning Yang, Yuxuan Cosmi Lin, Chih-Piao Chuu, M. Saifur Rahman, Tong Wu, Ang-Sheng Chou, Hung-Yu Chen, Wei-Yen Woon, Szuya Sandy Liao, Shengxi Huang, Xiaofeng Qian, Jing Guo, Iuliana Radu, H.-S. Philip Wong, Han Wang
Publikováno v:
IEEE Transactions on Electron Devices. 70:2090-2097
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7969f06a16177b7c0ee2ffea794017cd
https://doi.org/10.1109/ted.2023.3241569
https://doi.org/10.1109/ted.2023.3241569
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 979-986 (2018)
In this paper, the 2-D materials-based lateral TFETs are holistically assessed by co-optimizing the material parameters, device designs, and digital circuit figure-of-merits, e.g., energy consumption and delay. Effect of material parameters such as e
Externí odkaz:
https://doaj.org/article/ba9af64756e44a3abbcfded2bb5d2d53
Autor:
Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1048-1055 (2018)
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their
Externí odkaz:
https://doaj.org/article/b3e6abfea7bb4f1db4bad4d5dfcd0818
Autor:
Zheng Sun, Chin-Sheng Pang, Peng Wu, Terry Y.T. Hung, Ming-Yang Li, San Lin Liew, Chao-Ching Cheng, Han Wang, H.-S. Philip Wong, Lain-Jong Li, Iuliana Radu, Zhihong Chen, Joerg Appenzeller
Publikováno v:
ACS Nano. 16:14942-14950
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3f86ae0caf198d7231d30eb8ee3404c
https://doi.org/10.1021/acsnano.2c05902
https://doi.org/10.1021/acsnano.2c05902
Autor:
Tarun kumar Agarwal, Bart Soree, Iuliana Radu, Praveen Raghavan, Giuseppe Iannaccone, Gianluca Fiori, Wim Dehaene, Marc Heyns
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract Two-dimensional (2D) material based FETs are being considered for future technology nodes and high performance logic applications. However, a comprehensive assessment of 2D material based FETs has been lacking for high performance logic appl
Externí odkaz:
https://doaj.org/article/3aba0caa895f420b8b71b17ac1ba4519
Autor:
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter
Publikováno v:
Nature Electronics
Nature electronics 5(7), 416-423 (2022). doi:10.1038/s41928-022-00798-8
Nature electronics 5(7), 416-423 (2022). doi:10.1038/s41928-022-00798-8
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3c96ff98c2af627f405ca5f31e61281
https://doi.org/10.1038/s41928-022-00798-8
https://doi.org/10.1038/s41928-022-00798-8