Zobrazeno 1 - 10 of 42 pro vyhledávání: '"Iulian Nistor"'
1
Akademický článek
MOVEMENT OF TWO-PHASE GAS-LIQUID FLOW IN HORIZONTAL AND INCLINED PIPES
Autor: Begench Silapov, Iulian Nistor
Publikováno v: Romanian Journal of Petroleum & Gas Technology, Vol 4, Iss 1, Pp 61-72 (2023)
Two-phase flows are found in almost all areas of technology. For example, tubular evaporators, boiling water reactors, boiler blowdown systems, heaters, boilers, gas lift pumps, oil and geothermal wells, oil and gas pipelines, refrigerators, process
Externí odkaz: https://doaj.org/article/bbad414634ae469097aeb7705b556f1e
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2
Akademický článek
DEMULSIFIER SELECTION FOR WATER SEPARATION FROM HEAVY CRUDE OIL EMULSIONS OF IRANIAN OIL FIELD
Autor: Fatemeh Yazdanmehr, Iulian Nistor
Publikováno v: Romanian Journal of Petroleum & Gas Technology, Vol 2, Iss 1, Pp 62-72 (2021)
In this study, various demulsifiers have been chosen for emulsion separation from heavy Iranian oil. The 16 types of water and oil based demulsifiers were tested using the selection procedure. Further, the current study assessed the effect of parame
Externí odkaz: https://doaj.org/article/55b8aa46759341e9bcb0695b24da94d0
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3
Akademický článek
DIGITAL OIL FIELD – FROM DATA TO REAL-TIME DECISION MAKING – SMART WORKING FOR OPERATIONS EFFICIENCY
Autor: Mohammad Rostami Dehka, Iulian Nistor
Publikováno v: Romanian Journal of Petroleum & Gas Technology, Vol 2, Iss 1, Pp 5-15 (2021)
Digital Oil Field (DOF) project in OMV Petrom aims to remotely monitor, troubleshoot and optimize operations and maintenance data and activities in a modern manner, and to foster value creation through increased integrated and reliable performance da
Externí odkaz: https://doaj.org/article/334ea9cc996645c2856dee5ea900f3e4
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4
Suppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell Concept
Autor: Munaf Rahimo, Iulian Nistor, David Green
Publikováno v: Key Engineering Materials. 945:83-89
This paper investigates the short channel effects (SCE) of the recently proposed Singular Point Source MOS (S-MOS) SiC MOSFET. The study was carried out using 2D and 3D TCAD simulations for a planar, trench and S-MOS 1200V SiC MOSFETs for the IV outp
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::934745613617532ea0d17ac7cb376abd
https://doi.org/10.4028/p-g4w5h5
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5
Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology
Autor: Munaf T. Rahimo, Iulian Nistor, David Green
Publikováno v: Materials Science Forum. 1062:539-543
This paper presents a Singular Point Source MOS (S-MOS) cell concept suitable for SiC MOSFETs targeting low conduction losses, low switching losses and high robustness. The S-MOS concept differs from standard Planar or Trench MOS cells in the manner
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88287e3eb723ed2956c6303a531b647f
https://doi.org/10.4028/p-u88313
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8
Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT
Autor: Munaf Rahimo, Iulian Nistor, David Green
Publikováno v: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel width per device area is devised. The S-MOS singl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6fa1d604b0408996e21fc90cb750434c
https://doi.org/10.23919/ispsd50666.2021.9452228
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