Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Iulian Gherasoiu"'
Engineering Transition Metals As Noble-Metal Free Bifunctional Electrode for Overall Water Splitting
Publikováno v:
ECS Meeting Abstracts. :2523-2523
The emerging need of clean and renewable energy drives the exploration of effective strategies to produce molecular hydrogen. With the assistance of highly active non-noble metal electrocatalysts, electrolysis of water is becoming a promising candida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e588e9de4c2ba98f5ed68a0ad1acd2
https://doi.org/10.1149/ma2022-02602523mtgabs
https://doi.org/10.1149/ma2022-02602523mtgabs
Publikováno v:
ECS Meeting Abstracts. :1854-1854
The emerging need of clean and renewable energy drives the exploration of effective strategies to produce molecular hydrogen. With the assistance of highly active non-noble metal electrocatalysts, electrolysis of water is becoming a promising candida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b95917019f80e2a72a80158f62e0610d
https://doi.org/10.1149/ma2022-02481854mtgabs
https://doi.org/10.1149/ma2022-02481854mtgabs
Publikováno v:
Journal of Electronic Materials. 46:6078-6083
The particularities of the carrier transport in p–n-GaN/n-AlN/p–n-Si and n-GaN/n-AlN/p–n-Si structures were investigated through temperature-dependent current density and forward voltage (J–V) measurements, carrier distribution, and transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e42bced7b0fe40a653419485ff281bb
https://doi.org/10.1007/s11664-017-5557-y
https://doi.org/10.1007/s11664-017-5557-y
Autor:
Kin Man Yu, Iulian Gherasoiu, Matthew Gaddy, Bo Cui, M. Hawkridge, Wladek Walukiewicz, Vladimir Kuryatkov, Huseyin Ekinci, Sergey A. Nikishin
Publikováno v:
physica status solidi (b). 257:2000122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be27baa36e2c4a9edbb0377e9f67f0d
https://doi.org/10.1002/pssb.202000122
https://doi.org/10.1002/pssb.202000122
Publikováno v:
2018 IEEE Nanotechnology Symposium (ANTS).
Hydrogen represents an ideal source of clean energy, and a suitable power storage alternative. While there are many production methods available to produce hydrogen, they either use fossil fuels or suffer from low efficiency, detracting from any bene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2581bf39f15f69e92e9572d2105a715
https://doi.org/10.1109/nanotech.2018.8653565
https://doi.org/10.1109/nanotech.2018.8653565
Publikováno v:
Journal of Crystal Growth. 425:393-397
PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f800029c37b1499db9f92fe19a43811
https://doi.org/10.1016/j.jcrysgro.2015.02.015
https://doi.org/10.1016/j.jcrysgro.2015.02.015
Publikováno v:
physica status solidi c. 11:381-384
Magnesium is the only known effective p-type dopant for nitride semiconductors. Although the p-doping is challenging for AlN and GaN, requiring the activation of the Mg acceptors, in the case of the MOCVD growth, methods for obtaining reliable and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156626eed5febfac749f2fb5c1b559a2
https://doi.org/10.1002/pssc.201300460
https://doi.org/10.1002/pssc.201300460
Publikováno v:
Semiconductor Science and Technology. 34:025014
Tunnel junctions are indispensable elements of multi-junction solar cells. The fabrication of InGaN tunnel junctions requires the growth of degenerately doped n- and p-type layers. While highly doped n-type InGaN films have been demonstrated, the gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c36cb0f3dda1428e9eaf821200fe6a78
https://doi.org/10.1088/1361-6641/aaf9ed
https://doi.org/10.1088/1361-6641/aaf9ed
Autor:
Ayrton Bernussi, M. E. Holtz, Sergey A. Nikishin, A. Chandolu, Iulian Gherasoiu, Mark Holtz, D. Y. Song
Publikováno v:
Journal of Electronic Materials. 38:557-562
We report studies of InN grown by plasma-assisted molecular beam epitaxy. GaN templates were first grown on sapphire substrates followed by InN overgrown at 457°C to 487°C. Atomic force microscopy shows the best layers to exhibit step-flow growth m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffae26de8cd4863bef64e7c852779d94
https://doi.org/10.1007/s11664-008-0634-x
https://doi.org/10.1007/s11664-008-0634-x
Autor:
T. Bird, William J. Schaff, D. Y. Song, Mark Holtz, David William Gotthold, M. O’Steen, S. X. Xu, Iulian Gherasoiu, Sergey A. Nikishin, A. Chandolu
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:399-405
In this work, the authors report step-flow growth mode of InN on [0001] oriented GaN templates, using a production-style molecular beam epitaxy system, Veeco GEN200®, equipped with a plasma source. Using adaptive growth conditions, they have obtaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d59821aceb57a6e58a1091ce08753111
https://doi.org/10.1116/1.2899412
https://doi.org/10.1116/1.2899412