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Autor:
M. Caraman, N. Curmei, L. Bruc, D. Serban, T. Goglidze, A. V. Simashkevich, Annett Thøgersen, I. Dementiev, Iu. Bokshitz, G. Shevchenko, Alexander Ulyashin
Publikováno v:
2020 International Semiconductor Conference (CAS).
The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus the formation by this method of the thin layers SiO x with a thickness of about ~1nm is demonstrated, which allows obtainin