Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Itzik Kaplan"'
Autor:
Daniel Schmidt, Manasa Medikonda, Michael Rizzolo, Claire Silvestre, Julien Frougier, Andrew Greene, Mary Breton, Aron Cepler, Jacob Ofek, Itzik Kaplan, Roy Koret, Igor Turovets
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efec40642400718dad045060d2eddd91
https://doi.org/10.1117/1.jmm.22.3.031203
https://doi.org/10.1117/1.jmm.22.3.031203
Autor:
Daniel Schmidt, Manasa Medikonda, Michael Rizzolo, Claire Silvestre, Julien Frougier, Andrew Greene, Mary A. Breton, Aron Cepler, Jacob Ofek, Itzik Kaplan, Roy Koret, Igor Turovets
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7df66fb6830c90dae8516a7276ceb8
https://doi.org/10.1117/12.2614077
https://doi.org/10.1117/12.2614077
Autor:
Chi-Chun Liu, Frougier Julien, Aron Cepler, Matthew Sendelbach, Nicolas Loubet, Dexin Kong, Daniel Schmidt, Gangadhara Raja Muthinti, Soon-Cheon Seo, Mary Breton, Veeraraghavan S. Basker, Pietro Montanini, Gilad Barak, Robinhsinkuo Chao, Itzik Kaplan, Susan Ng-Emans, John G. Gaudiello
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
As device scaling continues, controlling defect densities on the wafer becomes essential for high volume manufacturing (HVM). One type of defect, the non-selective SiGe nodule, becomes more difficult to control during SiGe epitaxy (EPI) growth for p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6cb854098e9ca2522cd164324bfc146
https://doi.org/10.1117/12.2297377
https://doi.org/10.1117/12.2297377
Autor:
Yang, Yuan, Ngo, Anhhuy, Wang, Mingmin, Chien, Chester, Baderot, Julien, Hallal, Ali, Clement, Nicolas, Martinez, Sergio, Foucher, Johann
Publikováno v:
Proceedings of SPIE; 1/20/2022, Vol. 12053, p120531R-120531R-14, 1p