Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Itti Rittaporn"'
Autor:
Takahiro Ishikawa, Ryosuke Akashi, Kotaro Kubo, Yuta Toga, Koji Inukai, Itti Rittaporn, Masamitsu Hayashi, Shinji Tsuneyuki
Publikováno v:
Physical Review Materials. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e87e89b9d9e093589c17f016fd2ce4a9
https://doi.org/10.1103/physrevmaterials.7.026202
https://doi.org/10.1103/physrevmaterials.7.026202
Publikováno v:
International Journal of Machine Learning and Computing. 4:319-327
1 Abstract—In this paper, we propose a generative model that describes the dynamics of flow on a network — the hidden Markov flow network (HMFN) model, which is inspired by the gravity model in traffic engineering. Each node in the network has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e88370941b4a9c708ebfe59e82754708
https://doi.org/10.7763/ijmlc.2014.v4.431
https://doi.org/10.7763/ijmlc.2014.v4.431
Publikováno v:
Journal of Applied Physics; 10/15/1992, Vol. 72 Issue 8, p3622, 4p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 5 Graphs
Autor:
Itti Rittaporn, Shigeru Saito, Tatsuo Tani, Yoshimi Iijima, Takeshi Ishikawa, Naoki Koshizuka, Takao Maeda, N. Watanabe
Publikováno v:
SHINKU. 40:180-183
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25548262d0e7d1e457125907527c33c8
https://doi.org/10.3131/jvsj.40.180
https://doi.org/10.3131/jvsj.40.180
Publikováno v:
Surface Science. 290:207-212
We first examined BiO surfaces of Bi2Sr2CaCu2Oy single crystals, whose Ca sites were substituted by Y ions, using an ultra-high vacuum scanning tunneling microscope (UHV-STM). Atomic resolution surface images were obtained for both the unsubstitut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8a3c5e5d873fe0b930eb4f60972837
https://doi.org/10.1016/0039-6028(93)90704-n
https://doi.org/10.1016/0039-6028(93)90704-n
Autor:
Kita, Ryusuke, Kawaguchi, Kenichi, Hase, Takashi, Koga, Takeshi, Itti, Rittaporn, Morishita, Tadataka
Publikováno v:
Journal of Materials Research; 05/01/1994, Vol. 9 Issue 5, p1280-1283, 4p
Publikováno v:
Review of Scientific Instruments; Aug1993, Vol. 64 Issue 8, p2221, 4p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1992, Vol. 10 Issue 5, p2311-2315, 5p
Publikováno v:
Journal of Materials Research; 05/01/1992, Vol. 7 Issue 5, p1060-1062, 3p
Publikováno v:
Japanese Journal of Applied Physics. 26:45
The Auger electrons induced by keV Ar+ -ion impact on a Si surface were studied. The spectral dependences on the Auger electron emission angle, the incident Ar+ ion energy and the oxygen partial pressure during ion bombardment were investigated in de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b2ce6824f0c0ccb0ca99449e3174844
https://doi.org/10.1143/jjap.26.45
https://doi.org/10.1143/jjap.26.45